Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A low-temperature drift high-power resistor and its preparation method

A high-power resistance, low-temperature drift technology, applied in the direction of resistance manufacturing, resistors, non-adjustable metal resistors, etc., can solve the problem of poor temperature characteristics of high-power resistance, and achieve the effect of a wide range of temperature applications

Active Publication Date: 2018-03-02
SHENZHEN ZHENHUA MICROELECTRONICS
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a low-temperature drift high-power resistor, which aims to solve the problem of poor temperature characteristics of existing high-power resistors in the full temperature range

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A low-temperature drift high-power resistor and its preparation method
  • A low-temperature drift high-power resistor and its preparation method
  • A low-temperature drift high-power resistor and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0026] The embodiment of the present invention improves the thick film printing process, adjusts the thickness of the printed film layer of the resistor, and improves the temperature characteristics of the resistor in the full temperature range (-55°C ~ 125°C) through the ratio of different film thickness areas, so that the temperature characteristics of the resistor are far It is much smaller than the existing products in the market, and has a wide range of temperature applications, which can meet the user's installation requirements.

[0027] The implementation of the present invention will b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is applicable to the field of electronic device manufacturing, and provides a low-temperature drift high-power resistor and a preparation method thereof. The resistor includes: two pins, a substrate, a two-pin conductor formed on the substrate, and a first conductor formed on the substrate. A sub-resistor; the first sub-resistor is rectangular, and its two short sides are respectively connected to the two-pin conductors, and the first sub-resistor is completely covered in the first resistance region by a resistor paste film with a first thickness and has a second thickness The resistive paste film is partially superimposed and covered on the resistive paste film with a first thickness; the pins are correspondingly connected to the pin conductors by dipping tin. The present invention adjusts the thickness of the resistance printing film layer by improving the thick film printing process, and improves the temperature characteristics of the resistance in the full temperature range (-55°C to 125°C) through the proportion of different film thickness regions, so that the temperature characteristics of the resistance are far smaller than There are existing products in the market with a wide range of temperature applications, which can meet the requirements of users for installation and use.

Description

Technical field [0001] The invention belongs to the field of electronic device manufacturing, and particularly relates to a low-temperature drift high-power resistor and a preparation method thereof. Background technique [0002] With the rapid development of the electronics industry, various electronic devices are becoming more and more precise in design, which enables products to work stably and accurately in various environments, and there are higher and higher requirements for the temperature characteristics of electronic components. . [0003] As a common electronic component, resistors are widely used in various electronic devices. Different types of resistors can be selected for different circuits, usually in the full temperature range (-55℃~125℃) or high voltage (3000V). High-power and high-voltage resistors. The temperature characteristics of existing high-power and high-voltage resistors in the full temperature range (-55℃~125℃) are basically greater than ±100ppm / ℃, whic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/00H01C17/065
Inventor 李迪伽元金皓
Owner SHENZHEN ZHENHUA MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products