Cu-based resistive random access memory manufacturing method and memory

Abstract

The invention discloses a Cu-based resistive random access memory manufacturing method and a memory. The manufacturing method comprises steps: combination processing is carried out on the composition of a Cu lower electrode to generate a compound buffer layer, wherein the compound buffer layer can prevent the Cu lower electrode from being oxidized; a solid electrolyte material is deposited on the compound buffer layer; and an upper electrode is deposited on the solid electrolyte material to form a memory. In the technical scheme of the invention, through inserting the compound buffer layer capable of preventing the Cu lower electrode from being oxidized between the Cu lower electrode and the solid electrolyte material, the Cu lower electrode can be effectively prevented from being oxidized during growth of the solid electrolyte material, and an electrode interface does not become rough due to oxidation, and thus, the technical problems of low device reliability and low yield of the Cu-based resistive random access memory caused as the electrode interface is rough in the prior art can be solved, and the reliability and the yield of the device are further improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to a preparation method of a Cu-based resistive variable memory and the memory. Background technique [0002] Resistive variable memory is a new type of non-volatile storage technology. Due to its high density, low cost, and the characteristics of breaking through the limitations of technological development, it has attracted great attention. The materials used include phase change materials, metal oxide materials, organic materials, etc. . The metal bridge resistive variable memory dominated by Cu ions or Ag ions is one of the main types of resistive variable devices, and its structure is usually composed of active metal electrodes such as Cu or Ag, solid electrolyte materials (such as chalcogenide materials, metal oxides, etc.), and inert electrodes (such as Pt, Pd, Ru, TaN, etc.). The mechanism of the metal bridge RRAM can be described by th...

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Problems solved by technology

[0004] The embodiment of the present invention provides a method for preparing a Cu-based resistive variable memory and memory, which solves the technical problems of low reliability and device yield of Cu-based resistive variable memory in the prior art

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