Automatic tailing method for CZ-80 single crystal furnace

A CZ-80, 1. CZ-80 technology, applied in the field of automatic control of a specific single crystal furnace, can solve the problems of long closing time, easy to close the tail, low pass rate, etc., to reduce the closing time and reduce production costs , The effect of reducing the tail docking rate

Active Publication Date: 2016-07-27
XINGTAI JINGLONG ELECTRONICS MATERIAL
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Problems solved by technology

However, there are many problems in the manual finishing operation: the finishing temperature and pulling speed cannot be controlled in time, and the pulling speed cannot be increased in a timely and effective manner when the pulling speed needs to be increased, resulting in a long finishing time, resulting in a longer finishing time of more than 3.5 hours, low efficiency, and the shape of the finishing Unsightly; Manual finishing speed and temperature adjustment is large, many mistakes, easy to close the tail, the tail docking rate is about 30%, the pass rate is low, and the cost is high

Method used

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  • Automatic tailing method for CZ-80 single crystal furnace
  • Automatic tailing method for CZ-80 single crystal furnace
  • Automatic tailing method for CZ-80 single crystal furnace

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Embodiment 1

[0020] An automatic finishing method for growing 8-inch single crystal silicon rods using CZ-80 single crystal furnace. The single crystal growth PLC control system of CZ-80 single crystal furnace is used for finishing operation. The average value of the single crystal pulling speed of 100mm growth is lower than 0.8mm / min, and the single crystal pulling speed is set to 0.6mm / min at the beginning of the single crystal finishing to prevent the high temperature in the furnace from breaking. The rated heating power at the end of the equal-diameter growth is continued as the initial value of the heating power at the end stage, and the temperature calibration value at the beginning of the single crystal end is set to 20, and the end is started.

[0021] If the average value of the single crystal pulling speed of the rear 100mm growth of the single crystal silicon rod is higher than 0.8mm / min during the equal diameter growth stage, the single crystal pulling speed is set to 0.7mm / min ...

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Abstract

The invention relates to the technical field of growth of single crystal silicon rods by lifting of a single crystal furnace, in particular to an automatic control method for a specific single crystal furnace, and particularly discloses an automatic tailing method for a CZ-80 single crystal furnace.By using an existing single crystal growth PLC (programmable logic control) system of the CZ-80 single crystal furnace, temperature adjusting and single crystal lifting speed parameters are set, the length and diameter of single crystal tailing are controlled, and automatic tailing of single crystal is achieved; tailing time in the growth process of single crystal silicon rods can be shortened, tailing efficiency can be improved, tail breakage rate upon tailing can be decreased, tailing capacity can be improved, tailing cost can be decreased, and a tailed shape is made attractive.

Description

technical field [0001] The invention relates to the technical field of growing single crystal silicon rods by pulling a single crystal furnace, in particular to an automatic control method for a specific single crystal furnace. Background technique [0002] CZ-80 crystal growth equipment (single crystal furnace) is mainly used to pull 6-9 inch large diameter, low oxygen carbon single crystal silicon rods, equipped with PLC automatic control system, melting material 140KG, produced by Hebei Jinglong Sunshine Equipment Co., Ltd. Produced by the company, it has excellent performance and has been widely used. [0003] At present, there is no automatic finishing process of CZ-80 single crystal furnace, and the single crystal finishing process operation must be carried out by manually controlling the single crystal pulling speed and temperature calibration of the single crystal furnace and other related parameters. After the growth of the single crystal isodiameter, it starts to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/22C30B15/20C30B29/06
CPCC30B15/20C30B15/206C30B15/22C30B29/06
Inventor 王会敏何京辉曹祥瑞颜超程志范晓甫周子江赵贝刘钦陈二星
Owner XINGTAI JINGLONG ELECTRONICS MATERIAL
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