Silicon nano brick array structure for Fourier color holography and design method thereof

A silicon nano-brick and array structure technology, which is applied in the field of micro-nano optics and optical holography, can solve the problems of too simple pattern, unsuitable for commercial application, and satisfactory, and achieve good processing error tolerance, simple process, and high Effects on Stability and Reliability

Inactive Publication Date: 2016-07-27
WUHAN UNIV
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  • Application Information

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Problems solved by technology

However, due to the complexity of manufacturing technology (requiring at least three layers of metal or dielectric films, plus photolithography), the realized pattern is not only too simple, but also the actual effect is unsatisfactory, which is far from the standard of commercial application.

Method used

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  • Silicon nano brick array structure for Fourier color holography and design method thereof
  • Silicon nano brick array structure for Fourier color holography and design method thereof
  • Silicon nano brick array structure for Fourier color holography and design method thereof

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Embodiment Construction

[0047] Figure 1~2 It is a schematic diagram of a silicon nano-brick unit. In the figure, 1 indicates a silicon nano-brick, 2 indicates a dielectric substrate, L, W, and H respectively indicate the length, width, and height of a silicon nano-brick; C indicates the side length of a silicon nano-brick unit, that is, the medium The side length of the base working surface; φ represents the orientation angle of the silicon nanobricks.

[0048] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0049] (1) In this embodiment, determine the dominant wavelengths of red light, green light, and blue light, which are respectively λ R =633nm, λ G =532nm, λ B = 447nm.

[0050] (2) Optimization of the structural parameters of the silicon nanobrick unit.

[0051] The silicon nano brick unit of the present invention comprises a first silicon nano brick unit, a second silicon nano brick unit and a third silicon n...

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Abstract

The invention discloses a silicon nano brick array structure for Fourier color holography and a design method thereof. The design method includes achieving efficient reflection of special wavelengths through the effect of magnetic resonance of silicon nano bricks; designing silicon nano bricks into different sizes and achieve narrow-band response to primary colors of red, green and blue; and performing precision adjustment on phase of incident light through the orientation angle of the silicon nano bricks so as to achieve Fourier color holography. The silicon nano brick array structure for Fourier color holography and the design method thereof are simple in technology and can be widely applied to the fields of true color display, information storage and anti-counterfeiting measures.

Description

technical field [0001] The invention relates to the technical fields of micro-nano optics and optical holography, in particular to a silicon nano-brick array structure and a design method thereof applied to Fourier color holography. Background technique [0002] Fourier computational holography is to set the Fourier spectral surface of the holographic sheet as the target holographic image, and then design the phase or amplitude distribution of the holographic sheet with the help of some optimal design algorithms to achieve the target holographic image. Fourier holography has outstanding advantages such as large pattern expansion angle, high efficiency, simple use, and high image signal-to-noise ratio, so it is widely adopted in commercial applications, such as laser holographic keyboards, random light point generators in somatosensory, etc. The current Fourier holography is mainly monochromatic light holography. Due to its monotonous color, it is difficult to meet the contin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03H1/16G03H1/04B82Y30/00B82Y40/00
CPCG03H1/0443G03H1/16B82Y30/00B82Y40/00G03H2001/045
Inventor 郑国兴李子乐吴伟标吕良宇王宇刘国根
Owner WUHAN UNIV
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