Visual component for observing crystal ingot growth process and crystal ingot growth device including same

Abstract

A view port for observing ingot growth process of the present embodiment is as a view port for observing the inside of a chamber providing a space in which a growth process of an ingot is performed includes a body part disposed on the a side of the chamber and having a hole connected to the inside of the chamber; a window being inserted into the hole of the body part to maintain a sealing state of the chamber and through which light being transmitted from the inside of the chamber; and, a window purge being disposed on the side of the body part an forms air curtain. The view port of the present invention proposed has an advantage of prevention of the glass contamination as well as self-cleaning of the contaminated glass of the view port. The ingot that grows in the inside of the chamber may be clearly observed through such a view port and then the process condition is determined through the process data accurately observed. Therefore, there is an advantage that is capable of producing the high quality of the ingot.

Description

technical field [0001] The invention relates to a visual component for observing crystal ingot growth and a crystal ingot growth device comprising the visual component. Background technique [0002] A silicon single crystal ingot is a common wafer material, which is prepared by the Czochralski method (CZ method). [0003] The CZ method is an ingot growth method by placing silicon in a quartz crucible, heating the quartz crucible to cause melting of the silicon, and then rotating and The seed crystal is gradually pulled to solidify the silicon melt on the surface of the seed single crystal, thereby growing an ingot with a predetermined diameter. [0004] Such an ingot growing device is provided inside the chamber. The chamber provides a space in which predetermined processes are performed to grow ingots for wafers used in materials for electrical components such as semiconductors. [0005] In addition, since the chamber is sealed to prevent contaminants from entering the i...

AI Technical Summary

Problems solved by technology

[0008] However, the problem is that gases generated in the quartz crucible inside the chamber or vaporized dopants cause glass contamination that contaminates the visible parts

[0009] In particular, due to contamination and opacity of the lower surface of the glass due to vaporized dopants, it is difficult to observe the interior of the chamber and cause errors in process data such as diameters measured by sighting components

[0010] In order to prevent such an error, although a method for adjusting the moving speed of the sensor, the sensitivity of the sensor, etc. is proposed, it is not enough to reduce the influence of the error

[0011] Therefore, the problem is that the process data determined from these inaccurate process data lead to a deterioration in the quality of the grown ingot

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