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A kind of preparation method of iron-based compound superconducting film

An iron-based superconducting and superconducting thin film technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc. The effect of significant inner-surface-outer orientation and good structural characteristics

Active Publication Date: 2018-08-31
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the present invention, a low-cost metal substrate is used instead of an expensive single crystal substrate to grow an iron-based superconducting thin film, and the disadvantages of poor crystallinity and orientation of the metal substrate are overcome, and a high-quality iron-based compound superconducting film can be prepared on the metal substrate. conductive film

Method used

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  • A kind of preparation method of iron-based compound superconducting film
  • A kind of preparation method of iron-based compound superconducting film

Examples

Experimental program
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Effect test

Embodiment 1

[0015] FeSe 0.5 Te 0.5 Put the iron-based compound superconducting target into the pulsed laser epitaxy deposition system, and vacuum the pulsed laser epitaxy deposition system to 5×10 -6 Pa, the heating temperature of the RABiTS metal substrate was set at 400°C, and the laser energy was set at 320mJ per pulse. The target is melted with a pulsed laser, and the sputtered afterglow diffuses onto the RABiTS metal substrate, where an iron-based compound superconducting film is deposited on the metal substrate. During the sputtering process, the target kept a rotation rate of 15° per minute, RABiTS maintained a rotation rate of 25° per minute, and the distance between the target and the RABiTS metal substrate was kept at 4 cm. After 180 minutes of deposition, the deposition was completed, and then the temperature was lowered to ambient temperature at a cooling rate of 5° C. per minute, and finally an iron-based compound superconducting thin film was prepared.

[0016] FeSe prepa...

Embodiment 2

[0018] Ba(Fe 0.95 co 0.05 ) 2 As 2 Put the iron-based compound superconducting target into the pulsed laser epitaxy deposition system, and vacuum the pulsed laser epitaxy deposition system to 2×10 -6 Pa, the heating temperature of the RABiTS metal substrate is set to 750°C, and the laser energy is set to 350mJ per pulse. The target is melted with a pulsed laser, and the sputtered afterglow diffuses to the RABiTS metal substrate, and an iron-based compound superconducting thin film is deposited on the RABiTS metal substrate. During the sputtering process, the target kept a rotation rate of 25° per minute, the RABiTS metal substrate kept a rotation rate of 30° per minute, and the distance between the target and RABiTS was kept at 4.5 cm. After 120 minutes of deposition, the deposition is completed, and then the temperature is lowered to ambient temperature at a rate of 10° C. per minute, and finally an iron-based compound superconducting thin film is prepared.

Embodiment 3

[0020] FeSe 0.1 Te 0.9 Put the iron-based compound superconducting target into the pulsed laser epitaxy deposition system, and vacuum the pulsed laser epitaxy system to 7×10 -6 Pa, the heating temperature of the IBAD metal substrate is set to 450°C, and the laser energy is set to 300mJ per pulse. The target is melted with a pulsed laser, and the sputtered afterglow diffuses to the IBAD metal substrate, where a superconducting iron-based compound film is deposited on the metal substrate. During the sputtering process, the target maintains a rotation rate of 10° per minute, the IBAD maintains a rotation rate of 20° per minute, and the distance between the target and the IBAD metal substrate is kept at 5 cm. After 150 minutes of deposition, the deposition was completed, and then the temperature was lowered to ambient temperature at a cooling rate of 15° C. per minute, and finally an iron-based compound superconducting thin film was prepared.

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Abstract

The invention provides a preparation method of an iron base compound superconducting thin film. The method is as below: adding an iron-based superconducting compound target into a pulsed laser epitaxial deposition system, melting an iron-based superconducting compound target by pulsed laser at the vacuum degree of less than 9*10<-5>Pa, and depositing on a heated metal-base band to form a film; keeping a distance between the target and the metal-base band during the deposition; maintaining rotation of the target and the metal-base band; after the deposition, cooling to ambient temperature, and forming an iron-base compound uperconducting thin film. The metal-base band is IBAD or RABiTS, the heating temperature of the metal-base band is 350-950 DEG C, the deposition time is 50-200 min, the vacuum degree is lower than 9*10<-5>Pa, the laser energy density is each pulse of 100mJ-350mJ, and the distance between the target and the metal-base band is 3.5cm-5.5cm. The iron-base superconducting compound target is FeSe1-xTex, 0.1<x<0.9, or Ba (Fe1-xCox) 2As2, 0.05<x<0.9, or BaFe2 (As1-xPx) 0.1<x< 0.9.

Description

technical field [0001] The invention relates to a preparation method of an iron-based compound superconducting thin film. Background technique [0002] Iron-based superconducting materials were first developed in La[O 1-x f x ] FeAs(x=0.05-0.12) material [Iron-based layered superconductor LaO 1-x f x FeAs (x=0.05-0.12) with Tc=26K reported in J.Am.Chem.Sco.130, 3296-3297 (2008)] has a superconducting transition temperature of 26K. Superconductivity has been found in at least seven typical iron-based material structures, namely "11" (FeSe and its doping), "111" (LiFeAs, NaFeAs), "122" ((Ba, Sr, Ca )Fe 2 As 2 ), "1111" (REFeAsO, RE = rare earth element), "32522" (Sr 3 sc 2 o 5 Fe 2 As 2 ), "42622" (Sr 4 V 2 o 6 Fe 2 As 2 ) and "43822" (Ca 4 Mg 3 o 8 Fe 2 As 2 )Wait. Iron-based superconducting materials are another discovery of high-temperature superconducting materials after the discovery of copper oxide high-temperature superconducting materials, which h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/06
CPCC23C14/0623C23C14/28
Inventor 徐中堂马衍伟原蒲升
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI