A kind of preparation method of iron-based compound superconducting film
An iron-based superconducting and superconducting thin film technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc. The effect of significant inner-surface-outer orientation and good structural characteristics
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0015] FeSe 0.5 Te 0.5 Put the iron-based compound superconducting target into the pulsed laser epitaxy deposition system, and vacuum the pulsed laser epitaxy deposition system to 5×10 -6 Pa, the heating temperature of the RABiTS metal substrate was set at 400°C, and the laser energy was set at 320mJ per pulse. The target is melted with a pulsed laser, and the sputtered afterglow diffuses onto the RABiTS metal substrate, where an iron-based compound superconducting film is deposited on the metal substrate. During the sputtering process, the target kept a rotation rate of 15° per minute, RABiTS maintained a rotation rate of 25° per minute, and the distance between the target and the RABiTS metal substrate was kept at 4 cm. After 180 minutes of deposition, the deposition was completed, and then the temperature was lowered to ambient temperature at a cooling rate of 5° C. per minute, and finally an iron-based compound superconducting thin film was prepared.
[0016] FeSe prepa...
Embodiment 2
[0018] Ba(Fe 0.95 co 0.05 ) 2 As 2 Put the iron-based compound superconducting target into the pulsed laser epitaxy deposition system, and vacuum the pulsed laser epitaxy deposition system to 2×10 -6 Pa, the heating temperature of the RABiTS metal substrate is set to 750°C, and the laser energy is set to 350mJ per pulse. The target is melted with a pulsed laser, and the sputtered afterglow diffuses to the RABiTS metal substrate, and an iron-based compound superconducting thin film is deposited on the RABiTS metal substrate. During the sputtering process, the target kept a rotation rate of 25° per minute, the RABiTS metal substrate kept a rotation rate of 30° per minute, and the distance between the target and RABiTS was kept at 4.5 cm. After 120 minutes of deposition, the deposition is completed, and then the temperature is lowered to ambient temperature at a rate of 10° C. per minute, and finally an iron-based compound superconducting thin film is prepared.
Embodiment 3
[0020] FeSe 0.1 Te 0.9 Put the iron-based compound superconducting target into the pulsed laser epitaxy deposition system, and vacuum the pulsed laser epitaxy system to 7×10 -6 Pa, the heating temperature of the IBAD metal substrate is set to 450°C, and the laser energy is set to 300mJ per pulse. The target is melted with a pulsed laser, and the sputtered afterglow diffuses to the IBAD metal substrate, where a superconducting iron-based compound film is deposited on the metal substrate. During the sputtering process, the target maintains a rotation rate of 10° per minute, the IBAD maintains a rotation rate of 20° per minute, and the distance between the target and the IBAD metal substrate is kept at 5 cm. After 150 minutes of deposition, the deposition was completed, and then the temperature was lowered to ambient temperature at a cooling rate of 15° C. per minute, and finally an iron-based compound superconducting thin film was prepared.
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 

