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A normally-on sic JFET drive circuit with self-protection function

A driving circuit and self-protection technology, which is applied in the direction of circuits, output power conversion devices, electronic switches, etc., can solve the problem of inability to meet the rapidity requirements of SiCJFET bridge arm straight-through protection, can not solve the problem of drive power straight-through, long response time, etc. problem, to achieve the effect of reducing the possibility of straight-through, facilitating integration, and realizing high-speed switching

Active Publication Date: 2018-12-07
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Abstract
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Problems solved by technology

The common method of shoot-through protection is to connect a relay or solid-state disconnect switch in series in the circuit, but due to its long response time, it cannot meet the rapidity requirements of SiC JFET bridge arm shoot-through protection
Another method is to use an interlock structure for the drive circuit of the upper and lower tubes of the bridge arm or add a dead time to the drive signal, but this method cannot solve the problem of direct connection caused by the power failure of the drive power supply, and is not suitable for common applications. Pass-through SiC JFET bridge arm circuit

Method used

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  • A normally-on sic JFET drive circuit with self-protection function
  • A normally-on sic JFET drive circuit with self-protection function

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Embodiment Construction

[0023] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0024] A normally-on SiC JFET drive circuit with self-protection function, such as figure 1 and figure 2 As shown, including: bridge arm circuit, controller, drive module and self-protection circuit. The bridge arm circuit includes the DC bus voltage U DC , solid state switch S 1 , the upper tube SiC JFET and the lower tube SiC JFET, the four are connected in sequence; the input terminal of the controller is connected to the drive signal, and the output terminal is connected to the input terminal of the drive module; the drive module in...

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Abstract

The invention solves technical problems and provides a normally open SiC JFET (Junction Field-effect Transistor) drive circuit having a self protection function. When bridge arm direct connection is caused by drive power supply failure, an auxiliary capacitor in a self protection circuit discharges. A negative switching-off voltage is applied to a grid-source electrode of a SiC JFET to force the SiC JFET to be switched off quickly, so that a controller can cut power supply within a safe time period and the protection aim is achieved. Besides, drive output adopts an RCD structure, so that SiC JFET high speed switching-on and switching-off can be realized and grid voltage oscillation caused by Miller current can be inhibited. The normally open SiC JFET drive circuit is suitable for a high-speed bridge arm structure.

Description

technical field [0001] The invention belongs to the field of power electronic circuits, in particular to a normally-on SiC JFET drive circuit with self-protection function. Background technique [0002] Since SiC JFET (Silicon Carbide Junction Field Effect Transistor) has performance advantages such as high thermal conductivity, low on-state resistance, and fast switching speed, it is very suitable for high temperature, high efficiency, and high frequency applications. There are two types of SiC JFET power devices, normally on and normally off. Compared with the normally-on SiC JFET, the on-state resistance of the normally-off SiC JFET is larger, and the driving is more complicated; in addition, the threshold voltage of the normally-off SiC JFET is very low (less than 0.7V), and it is susceptible to interference and leads to false conduction. Not suitable for high frequency bridge arm circuits. [0003] The bridge arm circuit is the basic unit of all kinds of bridge power ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/38H03K17/041H03K17/16
CPCH02M1/38H03K17/04106H03K17/162H03K2217/0054Y02B70/10
Inventor 徐克峰秦海鸿徐华娟付大丰聂新
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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