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A normally-on sic JFET drive circuit with shoot-through protection

A driving circuit, normally-on technology, applied in the direction of electrical components, adjusting electrical variables, high-efficiency power electronic conversion, etc. Electricity, can not meet the rapidity requirements of SiCJFET bridge arm straight-through protection, long response time, etc., to achieve the effect of simple structure, reduced possibility, and reduced circuit loss

Inactive Publication Date: 2018-05-18
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common method of shoot-through protection is to connect a relay or solid-state disconnect switch in series in the circuit, but due to its long response time, it cannot meet the rapidity requirements of SiC JFET bridge arm shoot-through protection
Another way is to use an interlock structure for the upper and lower tube drive circuits of the bridge arm or add a dead time to the drive signal, but this method cannot solve the problem that the drive circuit cannot quickly provide a sufficiently high negative turn-off voltage at the moment of power-on. Or the straight-through problem caused by the power failure of the driving power supply, it is not suitable for the normally-on SiC JFET bridge arm circuit

Method used

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  • A normally-on sic JFET drive circuit with shoot-through protection
  • A normally-on sic JFET drive circuit with shoot-through protection

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Embodiment Construction

[0025] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0026] A normally-on silicon carbide junction field-effect transistor (SiC JFET) drive circuit with shoot-through protection, such as figure 1 As shown, including: self-protection circuit, bridge arm circuit upper tube, bridge arm circuit lower tube. The input terminal of the self-protection circuit is connected to the bus voltage, and the output terminal is connected to the lower tube Q2 of the bridge arm circuit; After the circuit is connected in parallel, one end is connected to the gate of the lower tube SiC JFET, and the other end is ...

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Abstract

The technical problem solved by the present invention is to provide an Changye -type SIC JFET drive circuit with direct protection. By adding the self -protection circuit to the driving circuit, it makes it negativeFor a safe bias voltage, forcing the subordinate SIC JFET to quickly turn off to achieve the purpose of direct protection. The auxiliary circuit in the driving circuit can effectively suppress misleading traffic, reduce the number of self -protection circuits, thereby reducing the power consumption of the drive circuit, increasing the direct connectivityProtection ability.

Description

technical field [0001] The invention belongs to the field of power electronic circuits, in particular to a normally-on SiC JFET drive circuit with through protection. Background technique [0002] Since SiC JFET (Silicon Carbide Junction Field Effect Transistor) has performance advantages such as high thermal conductivity, low on-state resistance, and fast switching speed, it is very suitable for high temperature, high efficiency, and high frequency applications and has been widely used. There are two types of SiC JFET power devices, normally on and normally off. Compared with the normally-on SiC JFET, the on-state resistance of the normally-off SiC JFET is larger, and the driving is more complicated; in addition, the threshold voltage of the normally-off SiC JFET is very low (less than 0.7V), and it is susceptible to interference and leads to false conduction. Not suitable for high frequency bridge arm circuits. [0003] The bridge arm circuit is the basic unit of all kin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/32H02M3/00
CPCH02M1/32H02M3/00H02M1/0048Y02B70/10
Inventor 徐克峰秦海鸿徐华娟聂新
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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