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Terahertz-wave-transmission-type modulator based on graphene

A graphene, transmission type technology, applied in the field of terahertz wireless communication, can solve the problems of complex preparation and complex modulator structure, and achieve the effect of simple structure

Inactive Publication Date: 2016-08-24
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the structure of the modulator is complicated and the preparation is relatively complicated.

Method used

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  • Terahertz-wave-transmission-type modulator based on graphene
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  • Terahertz-wave-transmission-type modulator based on graphene

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Embodiment Construction

[0020] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further elucidated below in conjunction with specific embodiments.

[0021] Specific implementation:

[0022] see figure 1 The structure of the graphene-based terahertz wave transmissive modulator shown. The quartz glass substrate 3 of the modulator has a surface area of ​​1.6×1.5 cm and a thickness of 128 um. A layer of single-layer graphene 4 is covered on the quartz glass substrate 3. The graphene is prepared by CVD. The size of the graphene prepared by this method can reach tens of centimeters and the quality is excellent. The top of the single-layer graphene 4 is covered with silicon and silicon dioxide films, wherein the silicon dioxide film 2 faces the single-layer graphene 4, the surface area of ​​the silicon dioxide film 2 is 1.5×1.5 cm, and the thickness is 300 nm. The silicon film 1 is on top of the ...

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Abstract

The invention relates to a terahertz-wave-transmission-type modulator based on graphene. According to the structure of the terahertz-wave-transmission-type modulator, a single graphene layer generated with the CVD method is transferred to a silica glass substrate, the graphene is covered with a silicon / silicon dioxide film, the surface area of the silicon / silicon dioxide film is slightly smaller than that of the silica glass substrate, silicon dioxide in the silicon / silicon dioxide film faces the graphene, metal electrodes are located at the portion, which is not covered with the silicon / silicon dioxide film, of the graphene, a modulation signal source is connected to the silicon substrate and the metal electrodes, and finally, a carrier source perpendicularly enters the silicon film. The terahertz-wave-transmission-type modulator is one of field modulators; when the modulation signal voltage is changed from 0 V to 50 V, and the carrier source is 0.6 THz, the modulation depth can be 81.3%, and the applied carrier source can be well modulated. The terahertz-wave-transmission-type modulator is simple and compact in structure, small in size, easy to integrate and control and wide in application range.

Description

technical field [0001] The invention relates to a modulator, in particular to a graphene-based terahertz wave transmission modulator, belonging to the technical field of terahertz wireless communication. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves with frequencies from 100 GHz to 10 THz (wavelengths from 3 mm to 30 microns), between millimeter waves and infrared light. It has the advantages of strong reception and strong anti-interference ability, and has become one of the hot frequency bands in the field of wireless communication research. The main reason restricting the development of terahertz wireless communication technology at present is the lack of devices that can effectively manipulate terahertz waves, and the modulator is one of the key components of terahertz wireless communication. The application and development of Hertzian wave technology has become a research hotspot in the field of terahertz. [0003] The performance o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
Inventor 肖丙刚陈静谢治毅
Owner CHINA JILIANG UNIV