AMOLED pixel driving circuit and pixel driving method

Abstract

The invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit comprises an inner pixel circuit and an outer compensation circuit. The inner pixel circuit is provided with at least one sub-pixel circuit, which is provided with a first driving thin film transistor (T1 1, T1 2.. T1 N), a second switch thin film transistor (T2 1, T2 2.. T 2N), an inner capacitor (C1 1, C 1 2.. C1 N), and an organic light-emitting diode (OLE). The outer compensation circuit is provided with a third switch thin film transistor (T3), a fourth switch thin film transistor (T4), a fifth switch thin film transistor (T5), a sixth switch thin film transistor (T6), and an outer capacitor (C2). The single or sub-pixel circuit of the inner pixel circuit adopts a 2T1C circuit structure, and the outer compensation circuit is used to compensate the non-uniformity and the drifting of the threshold voltage of the driving thin film transistor, and therefore the long-term uniform light emission of the AMOLED is realized, the power consumption is reduced, and the resolution ratio is increased.

Description

technical field [0001] The invention relates to the technical field of AMOLED display, in particular to an AMOLED pixel driving circuit and a pixel driving method. Background technique [0002] The existing active matrix organic light-emitting diode (Active Matrix / Organic Light Emitting Diode, referred to as AMOLED) mainly uses low-temperature polysilicon thin-film transistor (LTPS TFT) backplane, but due to the different grain sizes of low-temperature polysilicon thin-film transistors, the grain boundary arrangement Disorder, resulting in poor uniformity of its electrical characteristics, therefore, using the simplest 2T1C circuit, that is, a circuit composed of two thin film transistors and a capacitor, it is difficult to meet the requirements of uniform light emission of AMOLED; and due to the existence of grain boundaries, low temperature polysilicon thin film transistors (LTPS TFT) has a large leakage current, which makes the pixel circuit must have a large enough stora...

AI Technical Summary

Problems solved by technology

In the prior art, the internal compensation method is adopted, that is, by increasing the number of thin film transistors and capacitors inside a single or sub-pixel, to improve the electrical uniformity of the LTPS TFT backplane; the existing AMOLED display screen, the internal circuit of a single or sub-pixel The structure is 7T1C, that is, a circuit composed of seven thin film transistors and a capacitor. Although this method enables the low temperature polysilicon thin film transistor (LTPS TFT) backplane to obtain uniform electrical characteristics, however, due to the complex internal circuit structure of the sub-pixel, the thin film transistor There are a large number of capacitors and capacitors, and a large area needs to be occupied. Even if a top emission (top emission) structure is used, it is difficult to meet the display requirements of high resolution (>500ppi). Therefore, a more suitable compensation circuit and compensation method must be developed.

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