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Manufacturing method of flip LED chip

A technology of LED chips and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as top damage and flip-chip LED chips, and achieve good ohmic contact and improve reliability.

Active Publication Date: 2016-09-07
FOSHAN NATIONSTAR SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a method for manufacturing flip-chip LED chips to solve the problem in the prior art that the flip-chip LED chips are damaged by ejector pins

Method used

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  • Manufacturing method of flip LED chip
  • Manufacturing method of flip LED chip
  • Manufacturing method of flip LED chip

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Experimental program
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Embodiment Construction

[0024] As mentioned in the background art, during the encapsulation process of flip-chip LED chips in the prior art, ejector pins are likely to damage metal electrodes and insulating layers, causing problems such as short circuit and leakage of flip-chip LED chips.

[0025] Based on this, the present invention provides a method for manufacturing a flip-chip LED chip to overcome the above-mentioned problems in the prior art, including:

[0026] A first substrate is provided; a light emitting structure and a first insulating layer are sequentially formed on the first substrate, wherein the light emitting structure includes an N-type gallium nitride layer, an active layer, and a P-type gallium nitride layer formed in sequence layer and a metal reflective layer; etching the first insulating layer to form a patterned first through hole penetrating through the first insulating layer and the metal reflective layer and extending into the first N-type gallium nitride layer , and fill t...

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Abstract

The invention provides a manufacturing method of a flip LED chip. A first substrate is provided; a light-emitting structure and a first insulating layer are sequentially formed on the first substrate; a second insulating layer is formed on a first N-type electrode and the surface of the first insulating layer; the first insulating layer is etched to form a patterned first through hole which runs through the first insulating layer and a metal reflecting layer and extends into a first N-type gallium nitride layer; the contact position of the N-type electrode and a thimble during packaging of the chip is staggered by the patterned first through hole; patterning isolation is carried out on the N-type electrode; a short circuit caused by conduction of a P electrode and the N electrode since the thimble jacks through the insulating layer in the packaging process is prevented; the reliability of the chip in the packaging process is improved; and furthermore, good ohmic contact is formed by full annealing.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor optoelectronic devices and semiconductor lighting, in particular to a method for manufacturing flip-chip LED chips. Background technique [0002] As a new generation of solid cold light source, LED has the characteristics of low energy consumption, long life, easy control, safety and environmental protection, etc. It is an ideal energy-saving and environmental protection product, suitable for various lighting places. [0003] Traditional LED chips are generally made of sapphire substrates, which have poor heat dissipation performance, and are prone to problems such as leakage, serious light decay, and high voltage, which seriously affect the reliability of LED chips. [0004] Compared with traditional LED chips, flip-chip LED chips have the advantages of uniform current distribution, good heat dissipation, lower voltage, and high efficiency. During the packaging and use of flip-chip LED...

Claims

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Application Information

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IPC IPC(8): H01L33/52H01L33/54H01L33/38H01L33/00
CPCH01L33/005H01L33/38H01L33/52H01L33/54
Inventor 徐亮何键云
Owner FOSHAN NATIONSTAR SEMICON
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