Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing apparatus and manufacturing method

A technology for a manufacturing apparatus and a manufacturing method, which is applied to the manufacturing apparatus and the manufacturing field, can solve problems such as increase in operating cost, and achieve the effects of suppressing the reduction in productivity, suppressing the increase in operating cost, and suppressing the increase in operation cost.

Active Publication Date: 2016-09-14
TOWA
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the running cost when the product is manufactured by cutting (singulation) increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing apparatus and manufacturing method
  • Manufacturing apparatus and manufacturing method
  • Manufacturing apparatus and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] refer to figure 1 (a)~ Figure 7 (b) Example 1 of the production apparatus of the present invention will be described. For easy understanding, any of the drawings in this application document is appropriately omitted or exaggerated and schematically shown. The same reference numerals are assigned to the same constituent elements, and explanations thereof are appropriately omitted.

[0043] Such as figure 1 of (a), figure 1 As shown in (b), the QFN substrate 1 has a lead frame 2 . Semiconductor chip mounting portions (die pads: Japanese: dipad) 4 for mounting semiconductor chips (functional elements) 3 are arranged in a grid pattern on the lead frame 2 . The lead frame 2 is formed of metal such as copper (Cu) and 42 alloy (Fe—Ni), and its surface is subjected to lead-free tin plating (not shown). Many pins 5 are arranged around each die pad 4 . exist figure 1 of (a), figure 1 In (b), four pins 5 connected to electrodes (not shown) of the semiconductor chip 3 are...

Embodiment 2

[0078] refer to Figure 8 Example 2 of the production apparatus of the present invention will be described. Such as Figure 8 As shown, the manufacturing device 27 is a device for singulating a cut object (multilayer structure) into a plurality of products. The manufacturing apparatus 27 includes a substrate supply module A, a substrate cutting module B, and an inspection module C as respective components. Each component (modules A to C) is detachable and replaceable with respect to other components.

[0079] The substrate supply module A is provided with a substrate supply mechanism 28 . The QFN substrate 1 corresponding to the object to be cut is delivered from the substrate supply mechanism 28 and transferred to the substrate cutting module B by a transfer mechanism (not shown). In the board|substrate supply module A, the control part CTL for setting and controlling the operation|movement of the manufacturing apparatus 27, cutting conditions, etc. is provided.

[0080]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a manufacturing apparatus and a manufacturing method. The method cuts off a QFN substrate in three segments along a plurality of cutting lines set in a latticed shape on a QFN substrate, and comprises the steps of: first, along cutting lines in the length direction of the QFN substrate, cutting the portion having similar thickness with the connecting rod of a lead frame to form a cutting groove; second, along cutting lines in the width direction of the QFN substrate, cutting off the lead frame and sealing resin together; and third, in the cutting groove along the length direction of the QFN substrate, cutting the portion having similar thickness with residual sealing resin. Through only cutting off partial sealing resin in the cutting groove, the method can finally reduce the processing load of processing a QFN substrate uniwafer into a QFN substrate product, and thereby prevent the QFN substrate product from deviating or dispersing from a preset position of a cutting clamp tool.

Description

technical field [0001] The present invention relates to a manufacturing device and a manufacturing method for manufacturing a plurality of products obtained by cutting a cut object and separating the cut object into pieces. Background technique [0002] Divide the substrate including the printed circuit board, lead frame, etc. into a plurality of grid-like areas imaginary, mount chip-shaped elements (such as semiconductor chips) in each area, and then seal the entire substrate with resin, and the components thus formed Called the sealed substrate. The sealed substrate is cut by a cutting mechanism using a rotary knife or the like, and individualized into individual area units to form a product. [0003] Conventionally, a predetermined region of a sealed substrate has been cut using a cutting mechanism such as a rotary knife using a manufacturing apparatus. First, the sealed substrate is placed and sucked on the cutting jig attached to the cutting stage. Next, the sealed s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/67
CPCH01L24/97H01L21/67092H01L2224/48091H01L2224/48247H01L2224/97H01L2924/14H01L2224/85H01L2924/00014H01L2924/181H01L2224/49171H01L2924/00012
Inventor 冈本纯
Owner TOWA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com