Semiconductor device and manufacturing method thereof
A technology for semiconductors and fuse elements, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as penetration and corrosion
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Embodiment 1
[0019] figure 1 It is a figure which shows the 1st Embodiment of the semiconductor device of this invention. figure 1 (a) is a top view, figure 1 (b) along figure 1 A cross-sectional view of the cut plane A-A of (a).
[0020] Such as figure 1 As shown in (a), a plurality of fuse elements 3 are arranged in parallel on field oxide film 2 , and both ends of fuse element 3 are terminals 3A and 3B. Each fuse element is connected to the circuit from this terminal. The circuit judges whether or not current flows between the terminals 3A and 3B. The dimension of the fuse element in the direction perpendicular to the direction of the current flowing in the fuse element 3 is referred to as the width of the fuse element. exist figure 1 In (a), the direction perpendicular to the direction connecting terminals 3A and 3B is the width of the fuse element. In this embodiment, polysilicon is taken as an example to illustrate the fuse element. Of course, the present invention can be ca...
Embodiment 2
[0031]Next, a second embodiment of the semiconductor device of the present invention will be described with reference to the drawings.
[0032] figure 2 It is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention. and figure 1 Common parts in the sectional view of (b) are denoted by the same reference numerals. The difference is that the periphery of the grid 5 is covered with a porous insulating film 8 . The reason for covering the periphery of the grid 5 with the porous insulating film 8 is that when the fuse element 3 is cut, the cutting part of the fuse element 3 will generate heat together with the surrounding intermediate insulating film 4 due to the laser light 11, and rapidly expand and rupture. The grid 5 and the porous insulating film 8 absorb the crack and confine it inside. In this way, it is possible to prevent the influence of cutting of the fuse element 3 from affecting the silicon nitride film 6 .
[00...
Embodiment 3
[0035] image 3 It is a plan view showing a third embodiment of the semiconductor device of the present invention. In this embodiment, the lattice 5 is used again. Compared with the grid of embodiment 1, the grid 5 of this embodiment has the following difference: the windows 10 are collectively arranged on each fuse element 3 . In this way, the window interval M, which is the distance between adjacent windows 10 , is relatively reduced. The window is rectangular, and the length L of the long side is shorter than the wavelength of the laser for cutting the fuse element 3 . By setting the length of the window interval M to 1 / 2 to 1 / 10 of the length L of the long side of the window, the window interval M becomes relatively small, and the grid 5 can be plastically deformed without restriction or inhibition when the fuse element is cut. Expansion and rupture of the fuse element at the laser irradiation part.
[0036] The windows 10 can be arranged on the entire surface of the l...
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