Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Via hole structure, pixel structure and manufacture method of TFT (Thin Film Transistor) substrate

A technology of thin-film transistors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, circuits, etc., can solve problems such as large-area, unfavorable narrow frontal margin manufacturing, etc., achieve area improvement, improve reliability analysis, avoid The effect of production costs

Active Publication Date: 2016-10-05
HANNSTAR DISPLAY NANJING +1
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, with the improvement of the resolution of the liquid crystal display (that is, the improvement of the number of pixels), the thin film transistor substrate usually has a large number of via structures so that it occupies a larger area in the peripheral circuit area, which is not conducive to narrow frontal (slim border) product production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Via hole structure, pixel structure and manufacture method of TFT (Thin Film Transistor) substrate
  • Via hole structure, pixel structure and manufacture method of TFT (Thin Film Transistor) substrate
  • Via hole structure, pixel structure and manufacture method of TFT (Thin Film Transistor) substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0052] figure 2 A top view of the thin film transistor substrate 1 according to an embodiment of the present invention is shown. For convenience of description, the thin film transistor substrate 1 can be divided into a pixel area and a peripheral circuit area. In this embodiment, the pixel area includes at least a plurality of pixels and signal lines (such as gate lines and data lines) adjacent to the pixels; the peripheral circuit area can be an area other than the pixel area, for example including Components and lines such as gate drivers. In other embodiments, the pixel area may be called an active area or a visible area and the peripheral circuit area may be called an invalid area or an invisible area.

[0053] figure 2In , only the pixel P in the pixel area, the thin film transistor TFT, and the gate line G and the data line D adjacent to the pixel P are shown exemplarily. In fact, the pixel area may include a plurality of pixels and a plurality of thin film transis...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a via hole structure, a pixel structure and a manufacture method of a TFT substrate. The manufacture method comprises the following steps that a first electrode is formed on a substrate via lithographic etching; a gate insulation layer and a first photo resistance layer are formed on the first electrode and the substrate successively; the first photo resistance layer is exposed; part of the first photo resistance layer and the gate insulation layer is removed to form a first groove of the first electrode and a second groove of the substrate; the first groove, the second groove and a first regional photo resistance layer are covered with a pixel electrode and a second photo resistance layer successively; and the second photo resistance layer, the first regional photo resistance layer and part of the pixel electrode are removed, and the pixel electrode in the first and second grooves is maintained.

Description

[0001] The present invention relates to a thin film transistor substrate, in particular to a conduction hole, a pixel structure and a manufacturing method of the thin film transistor substrate. Background technique [0002] Among the known display devices, liquid crystal displays (LCDs) are popular in the market and widely used in various electronic products, such as mobile phones, computer screens and televisions, due to the advantages of high contrast, small size, and low power consumption. Wait. Users can obtain relevant information through the liquid crystal display. [0003] Common liquid crystal display technologies can be divided into twisted nematic (twisted nematic), vertical alignment (vertical alignment), in-plane switching (in-plane switching, IPS) and fringe field switching (fringe field switching) liquid crystal display, in which the in-plane switching liquid crystal display has a wide viewing angle (greater than 170 degrees) and small color shift, so the in-pla...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L23/538H01L27/12
Inventor 李懿庭王瀞雯
Owner HANNSTAR DISPLAY NANJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com