Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vertical constant current device with three-terminal protection function and manufacturing method thereof

A technology of protection function and constant current device, which is applied in the manufacture of semiconductor/solid state devices, electric solid state devices, semiconductor devices, etc., can solve the problems of hard drive circuit safety, low breakdown voltage, low constant current, etc., and achieve process saving Effects of cost, area reduction, and capacitance reduction

Inactive Publication Date: 2016-10-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current high breakdown voltage of constant current diodes is generally 30-100V, so there is a problem of low breakdown voltage, and the constant current that can be provided is also low, and most constant current diodes cannot cope with the harsh external environment. , it is easy to burn out when it is struck by lightning or the large voltage and high current generated by the fluctuation of the power grid, which makes it difficult to guarantee the safety of the subsequent drive circuit. A transient voltage suppressor diode (TVS, Transient Voltage Suppressor) is integrated around the constant current diode ), the anti-surge capability of the constant current diode and the entire drive system can be enhanced, and the reliability is greatly improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertical constant current device with three-terminal protection function and manufacturing method thereof
  • Vertical constant current device with three-terminal protection function and manufacturing method thereof
  • Vertical constant current device with three-terminal protection function and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0054] figure 1 For the traditional vertical constant current diode, figure 1 There are 3 sub-figures (a), (b) and (c) respectively representing the structure diagram of the two-terminal vertical type device, the symbol diagram of the constant current diode, and the diagram of the applied LED drive circuit;

[0055] Such as figure 1 As shown in (a), the traditional vertical constant current diode device structure includes a P-type s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a vertical constant current device with a three-terminal protection function and a manufacturing method thereof. The device comprises two parts of a vertical constant current diode and a transient voltage suppression diode. The vertical constant current diode part comprises a metal anode, a P-type substrate, a first lightly doped N-type epitaxial layer, a first P-type region, a second heavily doped N-type epitaxial layer, a first N-type heavily doped region and a first metal cathode. The transient voltage suppression diode structure comprises a metal anode, a P-type substrate, a first lightly doped N-type epitaxial layer, a second heavily doped N-type epitaxial layer, a second P-type region, an oxide layer and a second metal cathode. The transient voltage suppression diode and the vertical constant current diode are integrated together so that the constant current diode is enabled to have the anti-surge capability, the reliability of the constant current diode and the system can be enhanced, and appropriate breakdown voltage, clamp voltage and peak pulse current of the transient voltage suppression diode can be obtained by adjusting the doping junction depth and concentration of the second P-type region.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a vertical constant current device with protective functions at three terminals and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. However, the current high breakdown voltage of constant current diodes is generally 30-100V, so there is a problem of low breakdown voltage, and the constant current that can be provided is also low, and most constant current diodes cannot cope with the harsh external environment. , it is easy to burn out when it is struck by lightning or the large voltage and high current generated by the fluc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L21/329H01L21/77H01L27/06
CPCH01L29/861H01L21/77H01L27/06H01L29/6609
Inventor 乔明李成州于亮亮方冬张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com