Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-terminal vertical type constant current device with protective function and manufacturing method thereof

A technology of constant current devices and protection functions, applied in the field of vertical constant current devices and its manufacturing, can solve the problems of difficult to guarantee the safety of driving circuits, easy to burn out, etc., and achieve the effects of saving process costs, reducing area and increasing flexibility

Inactive Publication Date: 2016-12-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current constant-current devices cannot cope with the harsh external environment. It is easy to burn out in the case of lightning strikes or large voltages and high currents generated by grid fluctuations, which makes it difficult to guarantee the safety of subsequent drive circuits. In constant-current devices After the peripheral integrated transient voltage suppressor diode (TVS, Transient Voltage Suppressor), the anti-surge capability of the constant current device and the entire drive system can be enhanced, and the reliability is greatly improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-terminal vertical type constant current device with protective function and manufacturing method thereof
  • Three-terminal vertical type constant current device with protective function and manufacturing method thereof
  • Three-terminal vertical type constant current device with protective function and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0051] Such as figure 1 As shown in (a), it is a schematic structural diagram of a vertical constant current device with three terminals with self-protection function provided by the present invention: a vertical constant current device with three terminals with self-protection function, including integrated on the same silicon substrate On-chip constant current device structure and bidirectional transient voltage suppression diode st...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a three-terminal vertical type constant current device with a protective function and a manufacturing method thereof. The device comprises a constant device structure and a bidirectional transient voltage suppression diode structure which are integrated on the same silicon chip, wherein the constant device structure and the bidirectional transient voltage suppression diode structure share an N-type doping substrate, a third P-type heavily doped region and an anode. The constant current device structure also comprises a first diffusion P-type well region, an N-type heavily doped region, a first P-type heavily doped region, an N-type channel region, a first oxidation layer and a first metal cathode. The bidirectional transient voltage suppression diode structure also comprises a second P-type heavily doped region, a second oxidation layer and a second metal cathode. According to the three-terminal vertical type constant current device, the bidirectional transient voltage suppression diode and the constant current device are integrated together, so that the constant current device has certain surge resistance capacity, the reliability of the constant current device and the reliability of a system consisting of the constant current device are improved, and the area is greatly decreased.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a vertical constant current device with three terminals with built-in protection functions and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, which uses a two-terminal junction field effect transistor as a constant current source instead of an ordinary constant current composed of multiple components such as transistors, voltage regulator tubes, and resistors. The source can maintain a constant current value within a certain working ran...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L21/329H01L21/77H01L27/06
CPCH01L29/861H01L21/77H01L27/06H01L29/6609
Inventor 乔明方冬于亮亮李成州李路张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products