Flip LED chip based on conductive DBR structure and manufacturing method thereof

Abstract

The invention discloses a flip LED chip based on a conductive DBR structure and a manufacturing method thereof. A buffer layer, an N-GaN layer, an active layer and a P-GaN layer are sequentially grown on a substrate. The active layer and the P-GaN layer are etched to form a step and to expose part of the N-GaN layer. A DBR conductive reflection layer and a metal reflection layer are sequentially formed on the step of the P-GaN layer. An N metal conductive layer and a current expansion bar are arranged in the exposed portion of the N-GaN layer. An insulating layer is formed on the metal reflective layer and on the exposed portions of the N metal conductive layer and the N-GaN layer. Multiple through holes are formed on the insulating layer. A P eutectic layer and an N eutectic layer are formed on the insulating layer. The P eutectic layer is connected with the metal conductive layer via the through holes, and the N eutectic layer is connected with the N metal conductive layer via the through holes. The insulating layer isolates the N metal conductive layer from the P eutectic layer, and isolates the DBR conductive reflection layer from the N eutectic layer. The light emitting reliability of light-emitting diode products is improved, and the process difficulty and manufacture cost are reduced.

Description

technical field [0001] The invention relates to the technical field of light-emitting LED chips, in particular to a flip-chip LED chip based on a conductive DBR structure and a manufacturing method thereof. Background technique [0002] In order to avoid affecting the luminous efficiency due to the occupation of the light-emitting area by the electrodes in the front-mounted LED chip, chip developers designed a chip with a flip-chip structure, that is, the front-mounted chip is turned upside down, so that the light excited by the light-emitting layer is from the back of the chip, that is, from the transparent substrate. At the same time, a wire-free structure that is convenient for LED packaging factories is designed for flip chips. Therefore, the entire chip is called flip chip (FlipChip), and this structure is often used in high-power chips. The advantages of flip-chip LED chips are: first, the current of the P pole spreads across the entire surface, and can be used with a ...

AI Technical Summary

Problems solved by technology

[0003] The light of the LED flip chip needs to be extracted from the back. In order to improve the efficiency of light extraction, a light reflection layer is made on the front of the chip. The material of the reflection layer is divided into two types. One type of flip chip uses Ag as the reflection layer, and Ag It has high reflectivity and can conduct electricity, but because Ag atoms are easy to diffuse, the simplicity and reliability of the process are affected to a certain extent. Another flip-chip LED chip uses insulating DBR as the reflective layer. This structure is usually still It is necessary to add an ITO layer (indium tin oxide semiconductor transparent conductive film) on the surface of the P layer to increase the diffusion of current

The introduction of ITO increases the absorption of light and the complexity of the process

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