Half mode substrate integrated waveguide duplexer

A half-mode substrate integration and duplexer technology, which is applied in waveguide devices, electrical components, circuits, etc., can solve the problems of poor performance of duplexers, large insertion loss, and low Q value of circuits, and meet the requirements of miniaturization demand, large power capacity, and ease of integration

Inactive Publication Date: 2016-10-12
SHANGHAI UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0005] The performance of the early duplexers was poor. Although the traditional rectangular waveguide duplexers have good electrical performance indicators, they are bulky, costly and difficult to integrate with circuits.
Although the microstrip duplexer is small in size, low in cost and easy to process, it has large insertion loss and low circuit Q value

Method used

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  • Half mode substrate integrated waveguide duplexer
  • Half mode substrate integrated waveguide duplexer
  • Half mode substrate integrated waveguide duplexer

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Embodiment Construction

[0022] Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail:

[0023] see figure 1 with figure 2 , a half-mode substrate integrated waveguide duplexer, including a dielectric plate 2, and also includes an upper metal coating 1 on the front side of the dielectric plate 2 and a lower metal coating 3 on the reverse side of the dielectric plate 2; the upper metal coating 1 has The input port 1-1 and the two output ports 1-2, 1-3 are directly coupled and fed by 50Ω microstrip line; the upper metal plating layer 1 is provided with a ground metal through hole 5 .

[0024] The upper metal plating layer 1 is provided with two rectangular HMSIW cavities, which is about half the size of the general SIW cavity, which is conducive to miniaturization requirements. The metal through hole 5 is used as the cavity wall of the resonant cavity, and three slits 6 and 7 are arranged in the cavity of each HMSIW resonant cavity, and t...

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Abstract

The invention discloses a half mode substrate integrated waveguide duplexer. The half mode substrate integrated waveguide duplexer comprises a dielectric plate layer, and also comprises an upper metal coating layer on the front surface of the dielectric plate layer and a lower metal platting layer on the back surface of the dielectric plate layer, wherein an input port and two output ports are formed in the upper metal coating layer; the input and output ports are in direct coupled feeding by adopting 50-<omega> microstrip lines; and grounding metal through holes are formed in the upper metal coating layer. The duplexer adopts the HMSIW (half mode substrate integrated waveguide) structure, so that the duplexer is easy to integrate; meanwhile, the duplexer has the characteristics of large power capacity, high Q, low loss, high applicable frequency, and the like; and compared with the common SIW structure, the size of the HMSIW is reduced by about half, so that the size of the duplexer is greatly reduced.

Description

technical field [0001] The invention relates to a Half Mode Substrate Integrated Waveguide (HMSIW, Half Mode Substrate Integrated Waveguide) duplexer, belonging to the field of wireless communication systems. Background technique [0002] With the continuous development and wide application of wireless communication technology, filters play an increasingly important role in communication systems, and their performance is the key to the entire communication system. Therefore, it is required to have lower insertion loss to reduce the attenuation of useful signals, and it is required to have better square coefficient and wider stop band to reduce the interference of unwanted signals, as well as smaller volume and more light weight. [0003] Substrate-integrated waveguide filters have always been a research hotspot in the microwave and millimeter-wave fields because of their superior performance, small size, and ease of planar circuit integration. [0004] Duplexers are develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/207
CPCH01P1/207
Inventor 李国辉吴玉丹杨维
Owner SHANGHAI UNIV
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