A germanium-based silicon germanium falling field layer ldmos device structure

Abstract

The invention discloses a germanium-based silicon-germanium drop-field layer LDMOS device structure, the structure of which is as follows: a P-type germanium channel layer; an N-type doped germanium drift layer; a heavily N-type doped germanium ohmic contact layer ; a growth layer spaced between silicon germanium and germanium as a drift layer; a p-type doped silicon germanium drift drop field layer; a gate groove structure whose depth reaches the p-type germanium channel layer; an oxide medium formed in the gate groove layer; a gate metal layer formed in the gate groove; a source-drain metal electrode formed in the source-drain region.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a germanium-based semiconductor LDMOSFET device structure. Background technique [0002] Integrated circuits based on silicon-based CMOS technology have developed rapidly, and the application of silicon-based LDMOSFET devices in the fields of high-frequency and high-voltage devices and integrated circuits has gradually expanded. However, the radio frequency performance and withstand voltage capability of silicon-based LDMOSFET devices still need to be further improved. At present, with the gradual application of germanium semiconductor materials in silicon-based CMOS technology and the continuous development of epitaxial technology, significant progress has been made in the characteristics of germanium-based MOSFET devices. If germanium semiconductor materials are introduced into silicon-based LDMOSFET devices, it will inevitably improve the device performance. RF per...

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Problems solved by technology

However, the RF performance and withstand voltage capability of silicon-based LDMOSFET devices still need to be further improved

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