A quantum dot light-emitting diode and its preparation method

Abstract

The invention discloses a quantum dot light-emitting diode and its preparation method. The method comprises the steps of: first depositing a hole transport layer on the anode; then depositing a quantum dot light-emitting layer on the hole transport layer; then depositing an electron transport layer and An electron injection layer is placed on the quantum dot light-emitting layer, and then a cathode is evaporated on the electron injection layer to produce a QLED device; finally, a mixture of thermal expansion material and encapsulant is dripped around the prepared QLED device, and the cover sheet is encapsulated, and the ultraviolet Baking, packaging is complete. In the present invention, by mixing thermal expansion materials into the encapsulation glue, not only can the encapsulation effect be ensured, but also the heat can be conducted in time, so that the stability of the QLED device is enhanced. More importantly, the added thermal expansion material is very sensitive to heat, its thickness can be adjusted according to temperature changes, the time for the light emitted by the QLED device to pass through the thermal expansion material layer can be adjusted, and the wavelength of light after passing through the thermal expansion material layer can be adjusted , to optimize its color rendering.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method. Background technique [0002] Semiconductor quantum dots have size-tunable optoelectronic properties and have been widely used in light-emitting diodes, solar cells, and bioluminescent labels. After more than 20 years of development of quantum dot synthesis technology, people have been able to synthesize various high-quality nanomaterials, and their photoluminescence efficiency can reach more than 85%. Quantum dot light-emitting diodes (QD-LEDs) with quantum dots as the light-emitting layer are a promising next-generation display and solid-state lighting sources. Quantum dot light-emitting diodes (QLEDs) have received extensive attention and research in the fields of lighting and display in recent years due to their many advantages such as high brightness, low power consumption, wide color gamut, and eas...

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of poor performance repeatability and non-adjustable light color of existing QLED devices, which leads to poor display effect of the display device. bad question

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