Process for manufacturing semiconductor package having hollow chamber
A manufacturing process, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of inability to reduce the size of the packaging device, limit the size of the cavity space, and it is difficult to change the composition of the solder paste Ratio
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no. 1 example
[0042] see figure 1 , is a first embodiment of the present invention, a flow chart of a semiconductor package manufacturing process 10 with a hollow chamber, the semiconductor package manufacturing process 10 with a hollow chamber includes "providing the lower substrate 11", "forming the first ball The steps of the lower metal layer on the surface of the ring wall 12", "reflowing the solder balls 13", "coating flux 14" and "connecting the upper substrate and the lower substrate 15".
[0043] see figure 1 , figure 2 and Figure 5 , providing a lower substrate 100 in step 11, the lower substrate 100 may be selected from silicon, ceramics, glass, metal, polymer materials or other semiconductor materials, the lower substrate 100 has a bottom plate 110, a ring wall 120 and a groove 130, The ring wall 120 is formed on the base plate 110, and the ring wall 120 and the base plate 110 form the groove 130, the ring wall 120 has a surface 121 and a plurality of corners 122, the surfa...
no. 2 example
[0050] see Figure 9 , is a second embodiment of the present invention, a side sectional view of a semiconductor package manufacturing process 10 with a hollow chamber, the difference from the first embodiment is that the upper substrate 500 has a protrusion 530, and the connection surface 510 is The surface of the protruding portion 530, so that after the upper substrate 500 and the lower substrate 100 are bonded, the height of the hollow chamber C can be higher, and can be used to accommodate objects with a higher height or requiring vertical movement. The electronic component E.
[0051] In the present invention, the bonding layer 400 formed by reflowing the solder balls 300 connects the lower substrate 100 and the upper substrate 500 to form a sealed hollow chamber C for accommodating the electronic component E. Due to the solder balls The diameter D of 300 can reach the order of microns, so the width W of the surrounding wall 120 of the lower substrate 100 can be effecti...
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