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A light-emitting diode chip and its preparation method

A technology of light-emitting diodes and LED chips, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low light output efficiency of LEDs, and achieve the effect of improving light output efficiency and avoiding loss

Active Publication Date: 2019-05-14
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of low light extraction efficiency of LEDs in the prior art, an embodiment of the present invention provides a light emitting diode chip and a preparation method thereof

Method used

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  • A light-emitting diode chip and its preparation method
  • A light-emitting diode chip and its preparation method
  • A light-emitting diode chip and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] An embodiment of the present invention provides an LED chip, see figure 1 The LED chip includes a substrate 1, and an N-type layer 2, a light-emitting layer 3, and a P-type layer 4 sequentially laminated on the first surface of the substrate 1, and the P-type layer 4 is provided with a recess extending to the N-type layer 2. Groove 100, on the P-type layer 4, a current blocking layer 5, a transparent conductive layer 6, a P-type electrode 7 are stacked in sequence, an N-type electrode 8 is arranged on the N-type layer 2, the side walls of the N-type layer 2, the groove 100 and The transparent conductive layer 6 is covered with a passivation layer 9 , the second surface of the substrate 1 is provided with a reflective layer 10 , and the second surface of the substrate 1 is the surface opposite to the first surface of the substrate 1 .

[0041] In this embodiment, the angle between the side surface of the LED chip and the bottom surface of the LED chip is greater than 90°...

Embodiment 2

[0054] The embodiment of the present invention provides a kind of preparation method of LED chip, see image 3 , the method includes:

[0055] Step 201: growing an N-type layer, a light-emitting layer, and a P-type layer sequentially on the first surface of the substrate.

[0056] In this embodiment, the substrate can be a sapphire substrate, a silicon substrate or a silicon carbide substrate, the N-type layer is an N-type GaN layer, the light-emitting layer includes alternately stacked InGaN layers and GaN layers, and the P-type layer is a P-type GaN layer. GaN layer.

[0057] Specifically, this step 201 may include:

[0058] An N-type layer, a light-emitting layer, and a P-type layer are sequentially grown on the substrate by using Metal-organic Chemical Vapor Deposition (MOCVD) equipment.

[0059] Optionally, after step 201, the preparation method may further include:

[0060] The surface of the epitaxial wafer formed by the N-type layer, the light-emitting layer and th...

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PUM

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Abstract

The invention discloses a light-emitting diode chip and a preparation method thereof and belongs to the semiconductor technical field. The LED chip comprises a substrate as well as an N-type layer, a light-emitting layer and a P-type layer which are sequentially stacked on the first surface of the substrate; a groove extending to the N-type layer is formed in the P-type layer; a current blocking layer, a transparent conductive layer and a P-type electrode are sequentially stacked on the P-type layer; an N-type electrode is arranged on the N-type layer; the N-type layer, the side wall of the groove and the transparent conductive layer are covered with a passivated layer; the second surface of the substrate is provided with a reflection layer; the second surface of the substrate is a surface opposite to the first surface of the substrate; and an included angle between a side surface of the LED chip and the bottom surface of the LED chip is larger than 90 degrees and is smaller than 180 degrees, wherein the bottom surface of the LED chip is the surface of the reflection layer, and the side surface of the LED chip is an adjacent surface of the bottom surface of the LED chip. With the preparation method of the light-emitting diode chip of the invention adopted, the light extraction efficiency of the LED can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip and a preparation method thereof. Background technique [0002] As a solid-state lighting source, GaN-based light-emitting diodes (Light Emitting Diodes, referred to as LEDs) have the advantages of energy saving, environmental protection, high reliability, and long life. They are widely used in lighting, signal display, backlight, car lights, and large-screen displays. , is the current research hotspot. [0003] The existing LED chip includes a substrate, and an N-type layer, a light-emitting layer, and a P-type layer stacked on the substrate in sequence. The P-type layer is provided with a groove extending to the N-type layer, and the N-type layer is provided with a N-type layer. type electrode, and a P-type electrode is arranged on the P-type layer. [0004] In the process of realizing the present invention, the inventor finds that there are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/46H01L33/00
CPCH01L33/007H01L33/20H01L33/46
Inventor 卫婷刘小星顾小云王力明
Owner HC SEMITEK ZHEJIANG CO LTD