Horizontal-electrode inverted red-light LED chip and preparation method thereof

Abstract

The invention, which relates to the technical field of LED chip production, provides a horizontal-electrode inverted red-light LED chip and a preparation method thereof, According to the method, an omni-directional reflector (ODR) is formed by using an overall ODR dielectric layer and a bonding layer instead of trepanning in the ODR dielectric layer, so that the high reflection level of a P surface is guaranteed. Etching from an N surface to a P-GaP layer is carried out by using wet etching; metal is deposited on a P-GaP current spreading layer; a P-Pad central electrode is manufactured by photoetching; and then a AlGaInP inverted red-light chip having a horizontal electrode structure is formed. According to the invention, the process is simple and reasonable; and the RGB mixed application end packaging cost is low.

Description

Technical field [0001] The invention relates to the production technology field of LED chips. Background technique [0002] At present, the most effective way to improve the light efficiency of AlGaInP quaternary red light chips is to use wafer bonding (Waferbonding) substrate transfer technology, combined with the production of P-surface omnidirectional reflector (ODR) and N-surface roughening process. These three processes can make the prepared AlGaInP red LED chip luminous efficiency 3 to 4 times that of the traditional formal structure chip; however, SiO is often used in the production of high reflectivity ODR 2 Or MgF 2 As the dielectric layer, these two materials are non-conductive. In order to make the P-polar carrier smoothly pass through the dielectric layer and reach the active area, a certain size and number of holes need to be etched in the dielectric layer and filled with metal conductive ohmic contacts The existence of materials and dielectric holes will greatly red...

AI Technical Summary

Problems solved by technology

[0002] At present, the most effective way to improve the light efficiency of AlGaInP quaternary system red light chips is to use the wafer bonding (Waferbonding) substrate transfer technology, combined with the production of P-side omni-directional reflector (ODR) and N-side roughening process, combined with These three processes can make the luminous efficiency of the prepared AlGaInP red LED chip 3 to 4 times that of the traditional positive structure chip; however, when making the ODR with high reflectivity, SiO is often used. 2 or MgF 2 As a dielectric layer, neither of these two materials is conductive. In order for the P-pole carriers to pass through the dielectric layer and reach the active area smoothly, it is necessary to etch holes of a certain size and number in the dielectric layer and fill them with metal conductive ohmic contacts. Materials, the existence of dielectric holes will greatly reduce the reflectivity of ODR to the light emitted from the active area to the P surface. In addition, in the process, it is difficult to control the ohmic contact between the conductive metal in the ODR dielectric hole and the GaP on the P surface, which may easily cause local current concentration on the chip. , high forward voltage Vf, poor reliability such as anti-static; and its N, P electrodes are on the upper and lower sides of the chip, which is a vertical structure, and the difference in the electrode structure of the blue-green chip makes the RGB hybrid application end package cost increase

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