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KY (kyropoulos) low-vacuum sapphire crystal growth method

A technology of crystal growth and sapphire, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low yield and poor uniformity of sapphire crystal, shorten the growth period, improve the stability and improve the uniformity Effect

Inactive Publication Date: 2016-11-23
NINGXIA PROCRYSTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the sapphire crystal produced by this Kyropoulos method has poor uniformity and low yield

Method used

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  • KY (kyropoulos) low-vacuum sapphire crystal growth method
  • KY (kyropoulos) low-vacuum sapphire crystal growth method
  • KY (kyropoulos) low-vacuum sapphire crystal growth method

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Embodiment Construction

[0038] A kind of KY method sapphire low vacuum crystal growth method, comprises the following steps:

[0039] A. Place the alumina raw material in the crucible, install the seed crystal on the seed crystal rod, and close the furnace cover;

[0040] B. Turn on the vacuum pump to evacuate the furnace to 10 -3 Pa level;

[0041] C. Turn on the heating system to melt the alumina raw material. After the alumina is completely melted, fill the furnace with argon to reduce the vacuum degree in the furnace to 10 -1 For Pa level, the flow rate of argon is controlled at 0.75L / s, and the temperature of argon is kept at 1750°C;

[0042] D. Adjust the temperature field in the furnace so that the position of the melt cooling center coincides with the geometric center position of the crucible;

[0043] E. Adjust the height of the seed crystal so that the bottom of the seed crystal is 12 mm above the liquid surface of the raw material, start seeding, and after 3 times of seeding, the diamet...

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Abstract

The invention discloses a KY (kyropoulos) low-vacuum sapphire crystal growth method. The KY low-vacuum sapphire crystal growth method includes the steps of emptying, vacuumizing, heating, temperature field adjusting, crystal leading, multiple crystallizing, cooling and the like. With the method, shortcomings in the prior art can be overcome, and growth speed and yield of crystals are increased.

Description

technical field [0001] The invention relates to the technical field of sapphire production and processing, in particular to a KY sapphire low-vacuum crystal growth method. Background technique [0002] Sapphire single crystal has excellent optical, mechanical, chemical and electrical properties. It has high optical transmittance from 0.190 μm to 5.5 μm, high strength, erosion resistance, corrosion resistance and high temperature resistance. Therefore, it is widely used as a window material for various optical components and infrared military devices, space vehicles, and high-intensity lasers. Sapphire has high hardness and good wear resistance, and can manufacture bearings or wear-resistant components of various precision instruments, clocks and other precision machinery. In addition, sapphire is the semiconductor substrate material with the best comprehensive performance so far. With the increasing expansion of the white light LED market, the demand for sapphire substrates...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B17/00C30B29/20
Inventor 胡明理何永慎李业林林政育李宗谚詹经略
Owner NINGXIA PROCRYSTAL TECH CO LTD