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Field emission electron source compounding carbon nanotube array and light absorbing material

A carbon nanotube array and carbon nanotube technology, which is applied in the direction of discharge tube electron guns, discharge tube/lamp parts, circuits, etc., can solve the problems of low efficiency, achieve the effect of reducing the opening voltage and improving work efficiency

Active Publication Date: 2016-11-23
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, carbon nanotubes require a relatively high voltage to work stably in the electrostatic high-voltage field emission electron source, and the efficiency is low

Method used

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  • Field emission electron source compounding carbon nanotube array and light absorbing material
  • Field emission electron source compounding carbon nanotube array and light absorbing material
  • Field emission electron source compounding carbon nanotube array and light absorbing material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Such as figure 1 The shown embodiment of the present invention is a layout diagram of a carbon nanotube array on a substrate, a field emission electron source in which a carbon nanotube array is combined with a light-absorbing material, and the electron source includes an excitation light source and an electrode, and the electrode includes a conductive substrate 101 and an array (area A) composed of carbon nanotubes 102, the carbon nanotubes 102 are in a vertical growth columnar structure, the carbon nanotube arrays are grown on the conductive substrate 101, and the excitation light source is used for emitting irradiation Carbon nanotube lasers.

[0036] Carbon nanotubes 102 are arrayed into the carbon nanotube array with equal spacing; the spacing between the carbon nanotubes 102 is 3-5 times the diameter of the carbon nanotubes, and the columnar height of the carbon nanotubes is the same and It is 2-3 times of the spacing between the carbon nanotubes; the carbon nano...

Embodiment 2

[0059] The difference between this embodiment and the first embodiment is the way of growing the light-absorbing material on the carbon nanotubes. Such as Figure 5 The schematic diagram of growing light-absorbing material on carbon nanotubes shown in Example 2, Image 6 shown Figure 5 A-A sectional view of . In this embodiment, the carbon nanotube 402 is a structure with a cavity in the middle, and the outer wall of the carbon nanotube 402 is wrapped with a growing light-absorbing material 403b. At the same time, the light-absorbing material 403a is also grown inside the middle cavity of the carbon nanotube. It should be noted that, in this embodiment, the diameter of the light-absorbing material 403 a in the cavity of the carbon nanotube is equal to the radius of the carbon nanotube 402 . In this embodiment, the selection of carbon nanotubes, conductive matrix material, light-absorbing material, excitation light source, and field emission source current generation metho...

Embodiment 3

[0061] The difference between this embodiment and Embodiment 1 and Embodiment 2 is the way of growing the light-absorbing material on the carbon nanotubes. Such as Figure 7 Shown is a schematic diagram of growing light-absorbing materials on carbon nanotubes in Example 3 of the present invention, Figure 8 shown Figure 7 A-A sectional view of . In this embodiment, the carbon nanotube 502 is a structure with a cavity in the middle, and the light-absorbing material 503 is grown on the inside of the middle cavity of the carbon nanotube 502, and the process of growing the light-absorbing material is not provided on the outer wall of the carbon nanotube 502. It needs to be explained Yes, the diameter of the light absorbing material 503 in this embodiment is equal to the radius of the carbon nanotube 502 . In this embodiment, the selection of carbon nanotubes, conductive matrix material, light-absorbing material, excitation light source, and field emission source current genera...

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Abstract

The present invention provides a field emission electron source compounding a carbon nanotube array and a light absorbing material. The electron source includes an excitation light source and an electrode. The electrode includes a conductive substrate and the array composed of carbon nanotubes. The carbon nanotube array grows on the conductive substrate. The light absorbing material for absorbing energy or electron generated by photons grows on the carbon nanotubes. The light absorbing material fixes the carbon nanotubes on the conductive substrate. The field emission electron source uses a continuous laser or an ultrafast laser to irradiate the carbon nanotubes so as to induce the carbon nanotubes to emit a current, reduces a starting voltage of the current emission, and improves the work efficiency.

Description

technical field [0001] The invention relates, in particular, to a field emission electron source in which a carbon nanotube array and a light-absorbing material are combined. Background technique [0002] Electron emission sources play an important role in display imaging, electron microscopy, electron beam lithography, materials analysis and lasers. With the development of science and the advancement of technology, people have higher and higher requirements for electron sources in terms of materials and performance, such as high-frequency emission, durability and stability. [0003] Electron sources are mainly divided into thermal emission electron sources and field emission electron sources. Increase the electron energy of the cathode material of the electron source by heating the electron source and realize the continuous emission of electrons under the action of the accelerating electric field; or reduce the potential barrier of the cathode material through the high sta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J3/02
CPCH01J1/304H01J3/021
Inventor 刘开辉戴庆
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA