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Method for regulating surface wettability of oxygen-containing semiconductor material based on infrared light irradiation

A semiconductor and infrared light technology, applied in the field of anti-fog and self-cleaning, can solve the problems of long cycle, difficult control and low efficiency, and achieve the effect of short cycle, easy control and high efficiency

Inactive Publication Date: 2016-11-30
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention dynamically regulates the transition of the surface of the oxygen-containing semiconductor material from a superhydrophilic state to a superhydrophobic state, solves the problems of long period, low efficiency, and difficult control of the traditional method (dark storage or heat treatment), and realizes anti-fog on the surface of the material and intelligent control of self-cleaning capabilities

Method used

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  • Method for regulating surface wettability of oxygen-containing semiconductor material based on infrared light irradiation
  • Method for regulating surface wettability of oxygen-containing semiconductor material based on infrared light irradiation
  • Method for regulating surface wettability of oxygen-containing semiconductor material based on infrared light irradiation

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Embodiment 1

[0048] A method for regulating the wettability state of the surface of an oxygen-containing semiconductor material by infrared light irradiation, wherein the oxygen-containing semiconductor material is a ZnO wafer in a (0001) direction, and the specific steps include:

[0049] (1) ZnO wafer cleaning: 5×5×0.5mm 3 The ZnO wafers were placed in acetone, absolute ethanol and deionized water in turn, and were ultrasonically cleaned for 10 min to wash away surface pollutants. After cleaning, use N 2 Dry the moisture on the ZnO wafer surface.

[0050] (2) Initial contact angle test: place the cleaned ZnO wafer on a contact angle tester, drop a 5uL drop of water on the surface of the ZnO wafer, let it stand for 10s, and test the ZnO wafer after the drop is stable. The initial contact angle is 63.6°, the optical photo of ZnO wafer initial contact angle test is as follows Figure 1a shown.

[0051] (3) Ultraviolet light irradiation treatment: place the ZnO wafer in step (2) at a wavel...

Embodiment 2

[0055] A method for regulating the wettability state of the surface of an oxygen-containing semiconductor material by infrared light irradiation, the oxygen-containing semiconductor material is TiO in the (0001) direction 2 wafer, the specific steps include:

[0056] (1) TiO 2 Wafer cleaning: 5×5×0.5mm 3 TiO 2 The wafer was placed in acetone, absolute ethanol and deionized water in turn, and ultrasonically cleaned for 10 minutes respectively to wash away surface pollutants. After cleaning, use N 2 Dry TiO 2 Moisture on wafer surface.

[0057] (2) Initial contact angle test: the cleaned TiO 2 The wafer is placed on the contact angle tester, and a 5uL water drop is dropped on the TiO 2 On the surface of the wafer, let it stand for 10s. After the droplet is stable, test it. Test TiO 2 The initial contact angle of the wafer is 73.4°, TiO 2 The optical photographs of wafer initial contact angle test are as follows: Figure 2a shown.

[0058] (3) UV irradiation treatment: ...

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Abstract

The invention relates to a method for regulating surface wettability of an oxygen-containing semiconductor material based on infrared light irradiation. The method comprises a step (1) of cleaning a sample which refers to the oxygen-containing semiconductor material; a step (2) of performing initial contact angle testing of the sample; a step (3) of performing ultraviolet light irradiation treatment: placing the sample in the step (2) under ultraviolet irradiation to undergo irradiation; a step (4) of performing contact angle testing of the sample; a step (5) of performing infrared light irradiation treatment: placing the sample under infrared irradiation to undergo irradiation, wherein the infrared light wavelength is 0.76-100 [mu]m, the optical power density of the infrared light is 10-900 mW sq.cm, and the irradiation time is 5s to 50 min; and a step (6) of performing contact angle testing of the sample. According to the method, the infrared source wavelength range is wide, the selectivity is high; compared with other control methods, such as dark storage and annealing, according to the method, the surface wettability of the oxygen-containing semiconductor material can be regulated dynamically, and the method is simple to operate, short in used time, easy to control, low in cost and high in efficiency.

Description

technical field [0001] The invention relates to a method for regulating and controlling the surface wettability of an oxygen-containing semiconductor material based on infrared light irradiation, and belongs to the technical field of anti-fog and self-cleaning. Background technique [0002] In recent years, anti-fog and self-cleaning materials have attracted people's attention due to their special interfacial properties. At present, there are mainly two kinds of materials used in anti-fog and self-cleaning, namely superhydrophobic materials and superhydrophilic materials. Superhydrophobic materials generally refer to materials whose surface has a contact angle with water greater than 150° and a rolling angle less than 10°. Due to the large contact angle of water droplets on the surface, it shows very small surface adhesion, so it can roll on the surface to take away the attached dust and other pollutants, that is, the lotus leaf effect, to achieve the effect of self-cleanin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N13/00
CPCG01N13/00
Inventor 刘铎赵东方贾冉高乃坤张玲颜为山
Owner SHANDONG UNIV