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AMOLED driving circuit structure and manufacturing method thereof

A driving circuit and manufacturing method technology, applied in the direction of instruments, static indicators, etc., can solve the problems of amplification and affecting the accuracy of compensation, and achieve the effect of reducing parasitic capacitance and improving performance

Active Publication Date: 2016-12-07
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, in order to provide current uniformity, AMOLED usually adopts a compensation circuit design. At this time, the internal compensation circuit needs to store the threshold voltage of the driving thin film transistor. The size of the parasitic capacitance in the circuit will affect the compensation accuracy of the threshold voltage. This shortcoming will be magnified when AMOLED adopts thin film transistors with etch barrier structure (Etch Stop, ES) and back channel etching (BackChannel Etch, BCE) structure, especially when the thin film transistor with ES structure with larger parasitic capacitance is used Time

Method used

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  • AMOLED driving circuit structure and manufacturing method thereof
  • AMOLED driving circuit structure and manufacturing method thereof
  • AMOLED driving circuit structure and manufacturing method thereof

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Embodiment Construction

[0043] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0044] see image 3 or Figure 5 , the present invention provides an AMOLED drive circuit structure, comprising: a substrate 1, a patterned first metal layer 2 disposed on the substrate 1, a gate protection layer covering the first metal layer 2 and the substrate 1 3. The active layer 4 provided on the gate protection layer 3, the etch barrier layer 5 covering the active layer 4 and the gate protection layer 3, the pattern provided on the etch barrier layer 5 Thinned second metal layer 6;

[0045] The area where the first metal layer 2 and the second metal layer 6 spatially overlap is a parasitic capacitance area, and the thickness of the gate protection layer 3 in the parasitic capacitance area is greater than that outside the parasitic cap...

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Abstract

The invention provides an AMOLED driving circuit structure and a manufacturing method thereof. The thickness of a grid electrode protective layer in a parasitic capacitance region is increased, so parasitic capacitance, including parasitic capacitance and wiring parasitic capacitance of a thin film transistor, in an AMOLED driving circuit is reduced, accordingly influences of parasitic capacitance on performance of the AMOLED driving circuit, especially influences on the compensation function of the AMOLED driving circuit with the compensation function, are reduced, and performance of an AMOLED display device is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an AMOLED driving circuit structure and a manufacturing method thereof. Background technique [0002] Flat-panel display devices have many advantages such as thin body, power saving, and no radiation, and have been widely used. Existing flat panel display devices mainly include liquid crystal display devices (Liquid Crystal Display, LCD) and organic light emitting diode display devices (Organic Light Emitting Display, OLED). [0003] Organic light-emitting diode display devices have excellent characteristics such as self-illumination, no need for backlight, high contrast, thin thickness, wide viewing angle, fast response speed, flexible panels, wide operating temperature range, and simple structure and manufacturing process. It is considered as an emerging application technology for the next generation of flat panel displays. [0004] OLED can be divided into passive OLED (PMO...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/3225
CPCG09G3/3225
Inventor 韩佰祥
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD