High conductive carbon crystal board and manufacturing method thereof
A conductive carbon and crystal plate technology, applied in the direction of electrical components, electric heating devices, ohmic resistance heating, etc., can solve the problems of short service life, easy deterioration, low heating rate, etc., and achieve the effect of convenient manufacturing and low production cost
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[0015] A method for preparing a high-conductivity carbon crystal plate is characterized in that it comprises the steps in the following order:
[0016] (1) Clean the hard plastic plate ultrasonically with deionized water for 20 minutes, dry it at 40-70°C, put it in a chemical vapor deposition furnace, and remove the surface residue by Ar;
[0017] (2) Place the deposited graphene sample in a high-temperature vacuum tube furnace for annealing treatment at 150-220° C. and 2-20 Pa for 2-10 hours;
[0018] (3) With the help of dual-frequency capacitively coupled plasma discharge technology, using methyltrimethoxysilane as the source gas, helium as the carrier gas, and Ar as the dilution gas, deposit 10~ 100h; during the deposition process, adjust the flow rates of source gas, carrier gas and dilution gas as needed.
[0019] In the present invention, the deposition time can be selected within a wide range, but in order to make the prepared plate have high conductivity, preferably,...
Embodiment 1
[0023] 1) It consists of a rigid plastic plate and a coating, and the components of the plate coating are in the following parts by weight: graphene 20, NI5, AI5, Ti5, SiC10.
[0024] 2) Clean the hard plastic plate ultrasonically with deionized water and dry it at 40°C, put it into a chemical vapor deposition furnace, remove the surface residue by Ar, and then place the deposited graphene sample in a high-temperature vacuum tube furnace Annealing at 150°C and 2Pa for 2 hours;
[0025] 3) With the help of dual-frequency capacitively coupled plasma discharge technology, using methyltrimethoxysilane as the source gas, helium as the carrier gas, and Ar as the dilution gas, deposit at a temperature of 120 ° C and a pressure of 5 Pa for 10 h; take out the deposited coating The carbon crystal plate, and then its two surfaces are coated with a high temperature resistant insulating layer to obtain the plate A1.
Embodiment 2
[0027] 1) It consists of a rigid plastic plate and a coating, and the components of the plate coating are in the following parts by weight: graphene 50, NI10, AI10, Ti15, SiC15.
[0028] 2) Clean the hard plastic plate ultrasonically with deionized water and dry it at 70°C, put it in a chemical vapor deposition furnace, remove the surface residue by Ar, and then place the deposited graphene sample in a high-temperature vacuum tube furnace Annealing at 220°C and 20Pa for 10 hours;
[0029] 3) With the help of dual-frequency capacitively coupled plasma discharge technology, using methyltrimethoxysilane as the source gas, helium as the carrier gas, and Ar as the dilution gas, deposit at a temperature of 200 ° C and a pressure of 60 Pa for 100 h; take out the deposited coating A carbon crystal plate, and then its two surfaces are coated with a high-temperature insulating layer to obtain a plate A2.
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