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Film-forming method and film-forming apparatus
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A film-forming method and a film-forming device technology, which are applied to the metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of increased film-forming rate, increased amount, and inability to maintain the film-forming rate, and achieve the goal of suppressing The effect of destruction
Active Publication Date: 2020-02-07
SHINCRON KK
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In the case of using method 2), the density of ions striking the target increases, thereby resulting in an increase in the amount of the target substance sputtered from the target (increased film formation rate), and therefore, the desired film formation rate cannot be maintained
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experiment example 1
[0111] use figure 1 and figure 2 In the film forming apparatus 1 shown, 100 substrates S were set on the substrate holder 13, sputtering in the region 20 and plasma exposure in the region 60 were repeated under the following conditions, and the substrates S were obtained. A plurality of experimental example samples formed with a DLC thin film having a thickness of 3 μm.
[0112] The film hardness after film formation was evaluated under the following conditions. exist image 3 The results are shown in .
[0140] use figure 1 and figure 2 In the film forming apparatus 1 shown, 36 substrates S were set on the substrate holder 13, sputtering in the region 20 and plasma exposure in the region 60 were repeated under the following conditions, and the substrates S were obtained. Formed with SiO with a thickness of 1 μm 2 Multiple experimental example samples of thin films.
[0141] The etching rate after plasma film formation was evaluated under the following conditions. exist Figure 4 The results are shown in .
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Abstract
This method is a film forming method comprising forming a thin film by performing plasma treatment in which a plurality of substrates S to which a voltage is applied are sequentially introduced to a predetermined position in a film forming region 20 reached by sputtering particles released from targets 29a, 29b by a sputteringplasma from a sputtering electrical discharge, whereby the sputtering particles reach the surface of the substrates S and accumulate thereon, and ions in the sputtering plasma impinge on the substrates S or a deposit of the sputtering particles, deposition of sputtering particles and plasma treatment by a sputtering plasma being performed in the film forming region 20 formed in a vacuum container 11 having an exhaust system, and an intermediate thin film being formed, after which the substrates S are moved into a reaction region 60 disposed so as to be spatially separated from the film forming region 20, plasma re-treatment is performed in which ions in a plasma separate from the sputtering plasma are caused to impinge on the intermediate thin film, and a thin film is formed.
Description
technical field [0001] The present invention relates to a film forming method and a film forming device based on a bias sputtering method. Background technique [0002] As one of the sputtering film-forming methods, which is one of the film-forming methods using plasma reaction, there is known a method in which, in addition to applying a potential to the cathodeelectrode on which the target is placed, a method is also known. A potential is applied to a substrate electrode on which the substrate is placed, and a thin film is formed while applying a bias to the substrate placed on the substrate electrode (bias sputtering method) (Patent Documents 1 and 2). [0003] The principle of this bias sputtering method is roughly as follows. After introducing an ambient gas such as a rare gas into the system, power is supplied to the cathode electrode on which the target is placed to give a potential, and the introduced gas is discharged in the space between the cathode electrode and ...
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