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Schottky device manufacturing method and Schottky device

A manufacturing method and Schottky contact technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low reverse withstand voltage and large conduction voltage drop, and achieve high reverse withstand voltage Effect

Active Publication Date: 2019-05-14
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a Schottky device manufacturing method and the Schottky device, which are used to solve the technical problems of the Schottky device in the prior art that the normal conduction voltage drop is relatively large and the reverse withstand voltage is low

Method used

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  • Schottky device manufacturing method and Schottky device
  • Schottky device manufacturing method and Schottky device
  • Schottky device manufacturing method and Schottky device

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Embodiment 1

[0049] Embodiment 1 of the present invention provides a Schottky device manufacturing method. figure 2 It is a flow chart of the manufacturing method of the Schottky device provided by Embodiment 1 of the present invention. Such as figure 2 As shown, the Schottky device manufacturing method provided in this embodiment may include:

[0050] Step 101 , forming an epitaxial layer 2 on the substrate 1 , and opening a trench 6 in the epitaxial layer 2 .

[0051] Specifically, the substrate 1 in this embodiment may be an N-type substrate, and correspondingly, the epitaxial layer 2 may be an N-type epitaxial layer. The trench 6 can be formed by performing photolithography and etching processes on the epitaxial layer 2 .

[0052] In this step, preferably, before opening the trench 6 in the epitaxial layer 2, it may further include: forming an oxide layer 5 on the epitaxial layer 2, and the oxide layer 5 is composed of silicon dioxide. image 3 It is a schematic diagram of the st...

Embodiment 2

[0068] Embodiment 2 of the present invention provides a Schottky device. For the Schottky device in this embodiment, please refer to Figure 11 . Such as Figure 11 As shown, the Schottky device in this embodiment may include: a substrate 1, an epitaxial layer 2 formed on the substrate 1, a body region 9 formed on the epitaxial layer 2, a body region 9 formed on the Source region 10 and surface metal layer 4 on body region 9;

[0069] Wherein, a trench is opened in the epitaxial layer 2, the trench passes through the body region 9 and the source region 10, and a gate oxide layer 7 and polysilicon 8 are formed in the trench;

[0070] A Schottky contact is formed between the surface metal layer 4 and the source region 10 .

[0071] The structure and function of each part in this embodiment are similar to those of the foregoing embodiments, and will not be repeated here. The Schottky device in this embodiment can be fabricated using the method described in Embodiment 1, or o...

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Abstract

The invention provides a Schottky device manufacturing method and a Schottky device. The method includes the steps that an epitaxial layer is formed on a substrate, and a groove is formed in the epitaxial layer; a gate oxide layer and polysilicon are formed in the groove; ion injection is conducted on the top of the epitaxial layer to form a body region and a source region on the body region; a surface metal layer is manufactured, wherein Schottky contact is formed between the surface metal layer and the source region. According to the Schottky device manufacturing method and the Schottky device, when the device is switched on forward, an N-type channel is formed backward in the area, on the lower portion of the source region and close to polysilicon, of the body region, and accordingly the forward switch-on voltage of the device is low. Besides, when the device reverses, a PN junction between the body region and the epitaxial layer does not diffuse in the transverse direction, and accordingly reverse withstand voltage of the device is high.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a Schottky device manufacturing method and the Schottky device. Background technique [0002] Schottky devices have the advantages of short reverse recovery time and large current capacity, and are widely used in high-frequency inverters, digital products, generators, televisions, satellite receivers, missiles, and aircraft. [0003] figure 1 It is a schematic structural diagram of a Schottky device in the prior art. Such as figure 1 As shown, an N-type epitaxial layer 2 is formed on an N-type substrate 1, a P-type column 3 is formed in the N-type epitaxial layer 2, and a surface metal layer 4 is formed above the P-type column 3. The surface metal layer 4 and the Schottky contacts are formed between the N-type epitaxial layers 2 , and a PN junction is formed between the P-type pillars 3 and the N-type epitaxial layers 2 . When the device is forward-conducting, the curr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L29/872
CPCH01L29/66143H01L29/8725
Inventor 赵圣哲
Owner FOUNDER MICROELECTRONICS INT