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A kind of preparation method of metal ion doped titanium dioxide thin film

A technology of titanium dioxide and metal ions, applied in the field of photocatalysis, can solve the problems of difficulty in intermediate research, high cost, expensive raw materials, etc., and achieve the effects of good photoelectric activity, low cost, simple and convenient operation

Active Publication Date: 2019-01-08
LIAONING UNIVERSITY
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Problems solved by technology

However, these methods have corresponding shortcomings, such as expensive raw materials, poor sinterability between gel particles, and large shrinkage of the product during drying; the hydrothermal reaction mechanism is difficult to control, and it is difficult to study intermediates; the required coating equipment is complex and the yield rate is high. Low, high cost and other disadvantages

Method used

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  • A kind of preparation method of metal ion doped titanium dioxide thin film
  • A kind of preparation method of metal ion doped titanium dioxide thin film
  • A kind of preparation method of metal ion doped titanium dioxide thin film

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preparation example Construction

[0026] A method for preparing a metal ion-doped titanium dioxide film, comprising the steps of:

[0027] 1) The prepared amorphous titanium dioxide film is doped with metal ions by hydrothermal method;

[0028] 1.1) Cutting the prepared amorphous titanium dioxide film into samples of a certain size for use;

[0029] 1.2) Add the prepared metal salt solution into a polytetrafluoroethylene hydrothermal synthesis reactor; the metal salt solution is ferric nitrate solution, aluminum nitrate solution, chromium nitrate solution or silver nitrate solution, and the metal salt solution is The concentration is 0.01-0.1mol / L;

[0030] 1.3) Immerse the cut sample in the metal salt solution in the reaction kettle, adjust the pH value to 1-2, and perform a hydrothermal reaction. The temperature of the hydrothermal reaction is 140-160°C, and the hydrothermal time is 2-6 hours. Metal ion doping is carried out on the amorphous titanium dioxide thin film.

[0031] 2) Annealing the hydroheate...

Embodiment 1

[0032] Embodiment 1 A kind of metal ion-doped titanium dioxide film preparation method

[0033] Including the following steps:

[0034] 1) Doping the prepared amorphous titanium dioxide film with metal ions by hydrothermal method

[0035] 1.1) Cut the titanium dioxide thin film deposited on the FTO into samples with a size of 1 cm x 2 cm for use.

[0036] 1.2) Add a chromium nitrate solution with a concentration of 0.05 mol / L into a polytetrafluoroethylene-lined hydrothermal synthesis reactor.

[0037] 1.3) Immerse the sample cut in 1.1) into the chromium nitrate solution in the reaction kettle, adjust the pH value to 1-2 with nitric acid, set 150°C for hydrothermal reaction, and the reaction time is 2 hours.

[0038] 2) Annealing treatment

[0039] The hydrothermal sample was annealed at 400° C. for 2 hours under air conditions to obtain a metal ion-doped titanium dioxide thin film sample, which was recorded as 2h / 400.

Embodiment 2

[0040] Embodiment 2 A kind of metal ion-doped titanium dioxide film preparation method

[0041] Only change the hydrothermal reaction time in embodiment 1 step 1.3) to 6 hours. Other steps are the same as in Example 1, and the obtained metal ion-doped titanium dioxide thin film sample is recorded as 6h / 400.

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Abstract

The invention discloses a preparation method of a metal ion doped titanium dioxide film. The preparation method comprises the following steps of: 1) performing metal ion doping of a titanium dioxide film by a hydrothermal method; and 2) performing annealing treatment on the sample subjected to hydrothermal treatment in an air condition to obtain the metal ion doped titanium dioxide film. The method has the characteristics of easiness in operation, low cost, uniform and controllable film thickness, simple and effective doping way and the like.

Description

technical field [0001] The invention belongs to the technical field of photocatalysis, and in particular relates to a method for preparing a metal ion-doped titanium dioxide film, so as to improve the catalytic activity of the titanium dioxide photocatalyst under visible light. Background technique [0002] With the rapid development of human society, energy and environmental issues have become severe problems restricting social development, and for many years, people have been working on the research to solve these two problems. Semiconductor photocatalytic oxidation technology has attracted people's attention for many years because of its high efficiency, low price, environmental friendliness, no secondary pollution, and recyclable regeneration. Therefore, the current research and development of semiconductor photocatalytic oxidation technology is mainly concentrated on titanium dioxide photocatalyst. But TiO with a band gap of about 3.2eV 2 Ultraviolet light is needed t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/26B01J37/08B01J37/10
CPCB01J23/26B01J35/0033B01J35/004B01J37/08B01J37/10
Inventor 李永庆吕佳男韩晓鹏孔令茹田丽范晓星
Owner LIAONING UNIVERSITY
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