System for purifying trichlorosilane by utilizing quadruple-effect coupled distillation and treatment method thereof

A technology for purifying trichlorosilane and rectification, which is applied to chemical instruments and methods, silicon compounds, halosilanes, etc. It can solve the problem that the purity of silicon trichloride does not reach the electronic level and cannot effectively solve the problem of raw material preheating and other issues to achieve the effects of saving consumption, reducing device costs and optimizing process conditions

Active Publication Date: 2017-01-04
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the method can effectively achieve energy-saving effect, the purity of the silicon trichloride product obtained by t

Method used

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  • System for purifying trichlorosilane by utilizing quadruple-effect coupled distillation and treatment method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0050] Example 1:

[0051] This embodiment provides a system for purifying trichlorosilane using four-effect coupling rectification, which is characterized in that the first light removal tower 1, the first light removal tower 2, the second light removal tower 3, and the second Weight removal tower 4, feed preheater 5, first light removal tower reboiler 6, first light removal tower reboiler 7, second light removal tower reboiler 8, second light removal tower reboiler 9 and the heat pump compressor 10; wherein the top steam outlet of the first light removal tower 1 is connected to the light miscellaneous storage tank through the heat pump compressor 10 and the second light removal tower reboiler 9 in turn. The outlet of the bottom material is connected with the inlet of the first de-weighting tower 2; the top steam outlet of the first de-weighting tower 2 is connected with the inlet of the second de-lighting tower 3 through the first de-lighting tower reboiler 6 ; The top steam o...

Example Embodiment

[0053] Example 2:

[0054] This embodiment provides a processing method of the system described in Embodiment 1. The method is as follows:

[0055] The raw materials to be treated are subjected to the first light removal treatment through the first light removal tower 1, and the light components at the top of the tower are sequentially heated by the heat pump compressor 10, and are heated in the second light removal tower by the reboiler 9 and the second light removal tower. The material at the bottom of the tower 4 is recovered as light impurities after heat exchange, a part of the obtained heavy components is returned as reboiled gas, and a part enters the first heavy removal tower 2 for the first heavy removal treatment;

[0056] Wherein, the top temperature of the first light removal tower 1 is 43-45°C, the bottom temperature is 57-60°C, the top pressure is 250-270kPa, and the pressure drop of the entire first light removal tower 1 is less than 30kPa , The reflux feed ratio is 3...

Example Embodiment

[0064] Example 3:

[0065] This embodiment provides a treatment method for the system described in Example 1, except that the top temperature of the first light removal tower 1 is 40-43°C, the bottom temperature is 55-57°C, and the top pressure 200~230kPa, the pressure drop of the first light removal tower 1 is less than 20kPa, and its reflux feed ratio is 1.0~2.0; the top temperature of the first light removal tower 2 is 60~63℃, and the bottom temperature The temperature at the top of the tower is 70~73℃, the pressure at the top of the tower is 300~330kPa, the pressure drop of the whole tower is less than 20kPa, and the reflux feed ratio is 1.0~2.0; the top temperature of the second light removal tower 3 is 75~77℃, and the bottom The temperature is 85~87℃, the pressure at the top of the tower is 400~430kPa, the pressure drop of the whole tower is less than 50kPa, and the reflux feed ratio is 5.0~6.0; the top temperature of the second deweighting tower 4 is 90~93℃, and the bottom...

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Abstract

The invention provides a system for purifying trichlorosilane by utilizing quadruple-effect coupled distillation and a treatment method thereof. The system comprises a first lightness removing tower, a first heaviness removing tower, a second lightness removing tower, a second heaviness removing tower, a fed-material preheater, a first lightness tower reboiler, a first heaviness removing tower reboiler, a second heaviness tower reboiler and a heat-pump compressor. The system provided by the invention has the advantages that steam at the top of the first heaviness removing tower is used for heating materials of a tower kettle of the first lightness removing tower, steam at the top of the second lightness removing tower is used for heating materials of a tower kettle of the first heaviness removing tower, and steam at the top of the second heaviness removing tower is used for heating materials of a tower kettle of the second lightness removing tower and preheating materials fed into the first lightness removing tower; simultaneously, the steam at the top of the first lightness removing tower is pressurized and heated by the heat-pump compressor and then is used for heating the materials of the tower kettle of the second heaviness removing tower. The heat in a distillation system is fully utilized in the whole process flow, so that the consumption of steam and cooling water is saved and simultaneously the cost of the device is also reduced.

Description

technical field [0001] The invention belongs to the technical field of rectification and purification, and relates to a system and a treatment method for purifying trichlorosilane, in particular to a system and a treatment method for purifying trichlorosilane by four-effect coupled rectification. Background technique [0002] Polysilicon is a very important intermediate product in the silicon product industry chain. It is the main raw material for the manufacture of silicon polished wafers, solar cells and high-purity silicon products, and the most basic raw material for the information industry and new energy industry. According to its purity, polysilicon can be divided into metallurgical grade (that is, industrial silicon), solar grade and electronic grade. Electronic grade polysilicon is the starting material of monocrystalline silicon wafers, and is the most widely used and widely used material in semiconductor materials. The purity of electronic grade polysilicon requir...

Claims

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Application Information

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IPC IPC(8): C01B33/107
CPCY02P20/129C01B33/10778C01B33/1071C01P2006/80
Inventor 华超陆平白芳房川琦
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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