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System for purifying trichlorosilane by utilizing quadruple-effect coupled distillation and treatment method thereof

A technology for purifying trichlorosilane and rectification, which is applied to chemical instruments and methods, silicon compounds, halosilanes, etc. It can solve the problem that the purity of silicon trichloride does not reach the electronic level and cannot effectively solve the problem of raw material preheating and other issues to achieve the effects of saving consumption, reducing device costs and optimizing process conditions

Active Publication Date: 2017-01-04
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the method can effectively achieve energy-saving effect, the purity of the silicon trichloride product obtained by this method has not reached the electronic level, and the preheating problem of raw materials has not been effectively solved.

Method used

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  • System for purifying trichlorosilane by utilizing quadruple-effect coupled distillation and treatment method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] This embodiment provides a system for purifying trichlorosilane by four-effect coupled rectification, characterized in that the first light removal tower 1, the first light removal tower 2, the second light removal tower 3, the second light removal tower Weight removal tower 4, feed preheater 5, first weight removal tower reboiler 6, first weight removal tower reboiler 7, second weight removal tower reboiler 8, second weight removal tower reboiler 9 and a heat pump compressor 10; wherein, the top steam outlet of the first light removal tower 1 is connected to the light miscellaneous storage tank through the heat pump compressor 10 and the second heavy removal tower reboiler 9 successively, and the first light removal tower 1 The bottom material outlet is connected to the feed port of the first de-weight tower 2; the top steam outlet of the first de-weight tower 2 is connected to the feed port of the second de-light tower 3 through the first de-light tower reboiler 6 The...

Embodiment 2

[0054] The present embodiment provides the processing method of the system described in embodiment 1, and described method is as follows:

[0055] The raw materials to be treated are subjected to the first light removal treatment through the first light removal tower 1, and the light components obtained at the top of the tower are heated and heated by the heat pump compressor 10 in turn, and are combined with the second light removal tower reboiler 9 in the second light removal tower. The material at the bottom of tower 4 is extracted as light impurities after heat exchange, and part of the obtained heavy components is returned as reboiling gas, and part of them enters the first weight removal tower 2 for the first weight removal treatment;

[0056] Wherein, the temperature at the top of the first light removal tower 1 is 43-45°C, the temperature at the bottom of the tower is 57-60°C, the pressure at the top of the tower is 250-270kPa, and the pressure drop of the whole tower o...

Embodiment 3

[0065]This embodiment provides a treatment method for the system described in Example 1. In the method, except that the top temperature of the first light removal tower 1 is 40-43°C, the temperature of the bottom of the tower is 55-57°C, and the pressure at the top of the tower is It is 200~230kPa, the pressure drop of the whole tower of the first light removal tower 1 is less than 20kPa, and its reflux feed ratio is 1.0~2.0; The tower top temperature of the first light removal tower 2 is 60~63 ℃, the temperature 70-73°C, the top pressure of the tower is 300-330kPa, the pressure drop of the whole tower is less than 20kPa, and the reflux feed ratio is 1.0-2.0; the top temperature of the second light removal tower 3 is 75-77°C, The temperature is 85-87°C, the pressure at the top of the tower is 400-430kPa, the pressure drop of the whole tower is less than 50kPa, and the reflux feed ratio is 5.0-6.0; The temperature is 100-103° C., the temperature of the tower kettle is 700-730 k...

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Abstract

The invention provides a system for purifying trichlorosilane by utilizing quadruple-effect coupled distillation and a treatment method thereof. The system comprises a first lightness removing tower, a first heaviness removing tower, a second lightness removing tower, a second heaviness removing tower, a fed-material preheater, a first lightness tower reboiler, a first heaviness removing tower reboiler, a second heaviness tower reboiler and a heat-pump compressor. The system provided by the invention has the advantages that steam at the top of the first heaviness removing tower is used for heating materials of a tower kettle of the first lightness removing tower, steam at the top of the second lightness removing tower is used for heating materials of a tower kettle of the first heaviness removing tower, and steam at the top of the second heaviness removing tower is used for heating materials of a tower kettle of the second lightness removing tower and preheating materials fed into the first lightness removing tower; simultaneously, the steam at the top of the first lightness removing tower is pressurized and heated by the heat-pump compressor and then is used for heating the materials of the tower kettle of the second heaviness removing tower. The heat in a distillation system is fully utilized in the whole process flow, so that the consumption of steam and cooling water is saved and simultaneously the cost of the device is also reduced.

Description

technical field [0001] The invention belongs to the technical field of rectification and purification, and relates to a system and a treatment method for purifying trichlorosilane, in particular to a system and a treatment method for purifying trichlorosilane by four-effect coupled rectification. Background technique [0002] Polysilicon is a very important intermediate product in the silicon product industry chain. It is the main raw material for the manufacture of silicon polished wafers, solar cells and high-purity silicon products, and the most basic raw material for the information industry and new energy industry. According to its purity, polysilicon can be divided into metallurgical grade (that is, industrial silicon), solar grade and electronic grade. Electronic grade polysilicon is the starting material of monocrystalline silicon wafers, and is the most widely used and widely used material in semiconductor materials. The purity of electronic grade polysilicon requir...

Claims

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Application Information

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IPC IPC(8): C01B33/107
CPCY02P20/129C01B33/10778C01B33/1071C01P2006/80
Inventor 华超陆平白芳房川琦
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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