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A method for improving the uniformity of glass-based optical waveguide chip

A technology for glass substrates and waveguide chips, applied in the field of improving the uniformity of glass-based optical waveguide chips

Active Publication Date: 2019-07-26
ZTE CORP +1
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0007] In order to solve the technical defects in the existing glass-based buried optical waveguide technology, the present invention provides a method for improving the uniformity of glass-based optical waveguide chips. By forming an internal barrier layer with high resistivity on the surface of the glass substrate, the The resistance of the non-optical waveguide area of ​​the large glass substrate is used to suppress the temperature rise of the glass substrate and improve the burial depth uniformity of the buried ion-doped region used as an optical waveguide in the glass substrate

Method used

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  • A method for improving the uniformity of glass-based optical waveguide chip
  • A method for improving the uniformity of glass-based optical waveguide chip
  • A method for improving the uniformity of glass-based optical waveguide chip

Examples

Experimental program
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Effect test

Embodiment 1

[0062] Embodiment 1 Fabrication of buried single-mode optical waveguide (core diameter 8-10 microns)

[0063] (A) Evaporate a layer of Al with a thickness of 80-200nm on the upper surface of the glass substrate (1) made of silicate material, and retain the structure of the optical waveguide on the glass substrate (1) by photolithography and wet etching. A thin film with a width of 15-18 μm on the region is processed by photolithography and etching (or etching) to form an inner barrier layer mask (8).

[0064] (B) Put the glass substrate (1) into a KNO 3 Ion exchange is carried out in molten salt, the ion exchange temperature is 330-400°C, the ion exchange time is 30-240 minutes, the K in molten salt + K is formed in the glass substrate (1) by thermal diffusion + Diffusion layer, as inner barrier layer (10).

[0065] (C) removing the mask (8) used for making the internal barrier layer on the surface of the glass substrate (1) by etching.

[0066] (D) Evaporate a layer of Al...

Embodiment 2

[0071] Example 2 A buried multimode optical waveguide (with a core diameter of 45-50 microns) was fabricated.

[0072] (A) Evaporate a layer of Al with a thickness of 80-200nm on the upper surface of the glass substrate (1) made of silicate material, and retain the structure of the optical waveguide on the glass substrate (1) by photolithography and wet etching. A thin film with a width of 60 μm on the region is processed by photolithography and etching (or etching) to form an inner barrier layer mask (8).

[0073] (B) Put the glass substrate (1) into a KNO 3 Ion exchange is carried out in molten salt, the ion exchange temperature is 360-450°C, the ion exchange time is 60 minutes to 24 hours, the K in molten salt + K is formed in the glass substrate (1) by thermal diffusion + Diffusion layer, as inner barrier layer (10).

[0074] (C) removing the inner barrier layer mask (8) on the surface of the glass substrate (1) by etching.

[0075] (D) Evaporate a layer of Al with a t...

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Abstract

The invention provides a method of increasing glass-based optical waveguide chip uniformity. The method comprises the following steps of putting a glass substrate in fused salt containing K+ to carry out ion exchange processing and forming an inner barrier layer with high resistivity in a non-optical-waveguide area of a glass substrate surface; and through ion exchange processing and electric-field auxiliary migration processing, forming a buried-type ion-doped region which is not contacted with the inner barrier layer on the glass substrate with the inner barrier layer, wherein during the electric-field auxiliary migration processing process, the inner barrier layer with high resistivity on the glass substrate surface is used to increase a resistance in the non-optical-waveguide area of the glass substrate so as to restrain a temperature rise amplitude of the glass substrate and increase buried depth uniformity of the buried-type ion-doped region which is served as an optical waveguide in the glass substrate.

Description

technical field [0001] The invention relates to a method for improving the uniformity of a glass-based optical waveguide chip, in particular to a method for improving the uniformity of an optical waveguide on an ion-exchanged optical waveguide chip by making an inner barrier layer on the surface of a glass substrate, involving optical devices, integrated optics field. Background technique [0002] In 1969, S.E.Miller proposed the concept of integrated optics. The basic idea is to make optical waveguides on the surface of the same substrate (or substrate), and based on this, realize the integration of various devices such as light sources, couplers, and filters. Integrated production. This integration enables miniaturization, weight reduction, stabilization, and high performance of the optical system. [0003] The integrated optical devices fabricated on glass substrates by ion exchange method have always been valued by business circles and researchers. Glass-based integra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/134G02B6/122
CPCG02B6/122G02B6/1345
Inventor 郝寅雷曾福林王志坚安维冯泽明王根成
Owner ZTE CORP