Semiconductor device and manufacturing method thereof and electronic equipment comprising semiconductor device

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof and electronic equipment comprising the semiconductor device. The semiconductor device disclosed by the embodiment comprises a substrate, a first source / drain layer, a channel layer and a second source / drain layer, wherein the first source / drain layer, the channel layer and the second source / drain layer are sequentially superposed on the substrate and are adjacent to one another; and the channel layer comprises a semiconductor material which is different from the first source / drain layer and the second source / drain layer, and a gate stack formed around the periphery of the channel layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device, a method of manufacturing the same, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials. On the other hand, if a polycrystalline channel ma...

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Problems solved by technology

[0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials

On the other hand, if a polycrystalline channel material is used, the channel resistance is greatly increased compared to single crystal material, making it difficult to stack multiple vertical devices, as this would result in an excessively high resistance

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