Memory device and manufacturing method thereof

Abstract

The invention provides a memory device and a manufacturing method thereof. The memory device comprises a substrate, a plurality of bit lines, a first isolation structure, a second isolation structure, a plurality of bottom contact structures and a plurality of top contact structures, and is characterized in that the plurality of bit lines extend on the substrate in a parallel manner along a first direction; the first isolation structure and the second isolation structure extend on the substrate and the bit line along a second direction; the plurality of bottom contact structures are arranged between the bit lines along the second direction so as to enable the first isolation structures and the second isolation structure to be arranged at two sides of the bottom contact structures in the first direction; and the plurality of top contact structures are arranged on the bottom contact structures, and each top contact structure is provided with a shoulder portion which presses against the top surface of the corresponding first isolation structure.

Description

technical field [0001] The present invention relates to memory devices and methods of fabrication thereof, and more particularly to contact structures and methods of fabrication thereof. Background technique [0002] With the progress of integrated circuit technology, all kinds of electronic components are developing towards high integration, high speed operation and miniaturization. For random dynamic access memories (dynamic random access memories, DRAM), due to the increase in memory capacity and the continuous shrinking of the process, it is necessary to increase the capacitance of each memory cell (memory cell) and prevent short-circuit failure caused by capacitive dumping. In order to meet the development needs of DRAM in the future. [0003] DRAM technology can be mainly divided into two types: trench type and stack type. Among them, due to the low process difficulty, stacked capacitors have become the mainstream of commercial DRAM, and various stacked types have be...

AI Technical Summary

Problems solved by technology

However, within a limited unit area, stacked capacitors need to have a considerable capacitance height to ensure sufficient capacitance to store charges. This additional height also increases the difficulty of the process, and there are still many problems to be overcome.

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