A new device for drying samples during the fabrication of micro-nano devices
A production process and sample technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of convenient use and strong operability
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[0022] Specific examples, but do not limit the claims of the present invention patent, such as cleaning and spin-drying of silicon carbide:
example 1
[0023] Example 1, the steps are as follows:
[0024] 1) The purchased silicon carbide is cut into a square with a side length of 2 cm×2 cm;
[0025] 2) Cleaning the silicon carbide substrate;
[0026] 3) Place the silicon carbide substrate ultrasonically cleaned in deionized water on the Teflon device for spin-drying, and spin the substrate to dry by the spin of the Teflon device. The hollow tooth-like edge can not only catch the edge of the substrate to prevent the substrate from being thrown out at high speed, but also throw out the remaining liquid on the substrate so that the substrate is not stained with liquid for the next drying operation .
example 2
[0027] Example 2, the steps are as follows:
[0028] 1) The purchased silicon substrate containing oxide layer is cut into a square with a side length of 1.5 cm×2 cm;
[0029] 2) Cleaning the silicon wafer;
[0030] 3) Place the silicon wafer after ultrasonic cleaning in deionized water on the Teflon device for spin-drying, and spin-dry the substrate by using the spin of the Teflon device (can be assembled with a small motor). The hollow tooth-like edge can not only catch the edge of the substrate to prevent the substrate from being thrown out at high speed, but also throw out the remaining liquid on the substrate so that the substrate is not stained with liquid for the next drying operation .
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