Semiconductor device and forming method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as hot carrier injection, floating gate coupling, transmission interference, etc., and achieve the effect of increasing the lifting capacity, strong coupling effect, and ensuring performance
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[0072] It can be seen from the background art that with the development of semiconductor devices, higher requirements are placed on the density of semiconductor devices on a wafer. In the prior art, the density of semiconductor devices is often increased by reducing the size of semiconductor devices. For example, in NAND memory, the density of NAND memory is increased by reducing the size of NAND memory. However, after the size of the NAND memory is reduced, problems such as read disturbance, transmission disturbance, programming disturbance, floating gate coupling, and hot carrier injection between NAND memories are more serious.
[0073] To this end, the present invention provides a semiconductor device and a method for forming the same. The semiconductor device includes:
[0074] fins protruding from the surface of the semiconductor substrate;
[0075] A multi-layer channel structure located on the fin and in a stacked structure, the channel structure including a channel ...
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