QLED and fabrication method thereof

A light-emitting layer and electrode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low carrier mobility and quantum dot light-emitting layer thickness, etc., to improve luminous efficiency and brightness, Reduced driving voltage and good application prospects
CN106328822AActive Publication Date: 2017-01-11TCL CORPORATION
5 Cites 16 Cited by

Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
TCL CORPORATION
Publication Date
2017-01-11

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a QLED, which comprises, in sequence, the first electrode, hole injection layer, hole transport layer, emitting layer, electron transport layer and the second electrode. The emitting layer comprises quantum dots luminescent materials and mixed transport materials. The mixed transport materials comprise hole transport material and electron transport material. The hole transport material and electron transport material form double continuous network structure in the emitting layer, with the quantum dots luminescent materials scattered in the double continuous network structure.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of display, and in particular relates to a QLED and a preparation method thereof. Background technique

[0002] Inorganic nanocrystalline quantum dot luminescent materials have the advantages of saturated color and adjustable wavelength of emitted light, and high photoluminescence and electroluminescence quantum yields, which are suitable for the preparation of high-performance display devices. In addition, from the perspective of preparation technology, quantum dot light-emitting materials can be prepared into films by solution processing methods such as spin coating, printing, and printing equipment under non-vacuum conditions. Therefore, quantum dot light-emitting diodes (QLEDs) prepared with quantum dot films have become strong competitors for next-generation display technologies.

[0003] Generally, a QLED device includes an electrode 1 , a hole injection, transport layer, a light emitting layer, an el...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More