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QLED and fabrication method thereof

A light-emitting layer and electrode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low carrier mobility and quantum dot light-emitting layer thickness, etc., to improve luminous efficiency and brightness, Reduced driving voltage and good application prospects

Active Publication Date: 2017-01-11
TCL CORPORATION
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Problems solved by technology

[0005] The purpose of the present invention is to provide a QLED and its preparation method, aiming to solve the problem that the low carrier mobility of the existing QLED device affects the luminous efficiency of the device, and the thin thickness of the quantum dot light-emitting layer affects the service life during the period

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  • QLED and fabrication method thereof
  • QLED and fabrication method thereof
  • QLED and fabrication method thereof

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Embodiment Construction

[0019] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0020] combine Figure 1-3 , an embodiment of the present invention provides a QLED, such as figure 1 As shown, it includes a first electrode 1, a hole injection layer 2, a hole transport layer 3, a light-emitting layer 4, an electron transport layer 5 and a second electrode 6 arranged in sequence, and the light-emitting layer 4 is composed of quantum dot light-emitting materials and mixed It is made of transport material, the mixed transport material is a hole transport material and an electron transport material, and the hole transport material and the electron transport material for...

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Abstract

The invention provides a QLED, which comprises, in sequence, the first electrode, hole injection layer, hole transport layer, emitting layer, electron transport layer and the second electrode. The emitting layer comprises quantum dots luminescent materials and mixed transport materials. The mixed transport materials comprise hole transport material and electron transport material. The hole transport material and electron transport material form double continuous network structure in the emitting layer, with the quantum dots luminescent materials scattered in the double continuous network structure.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a QLED and a preparation method thereof. Background technique [0002] Inorganic nanocrystalline quantum dot luminescent materials have the advantages of saturated color and adjustable wavelength of emitted light, and high photoluminescence and electroluminescence quantum yields, which are suitable for the preparation of high-performance display devices. In addition, from the perspective of preparation technology, quantum dot light-emitting materials can be prepared into films by solution processing methods such as spin coating, printing, and printing equipment under non-vacuum conditions. Therefore, quantum dot light-emitting diodes (QLEDs) prepared with quantum dot films have become strong competitors for next-generation display technologies. [0003] Generally, a QLED device includes an electrode 1 , a hole injection, transport layer, a light emitting layer, an el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/111H10K50/115H10K2102/00H10K71/00
Inventor 陈崧钱磊杨一行曹蔚然向超宇
Owner TCL CORPORATION
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