Preparation method of silicon dioxide dielectric film

A dielectric film, silicon dioxide technology, used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of inability to meet the size of the microelectronic integrated circuit process, and achieve high gap filling performance and process stability. , Overcome the effect of insufficient filling
CN106356281BActive Publication Date: 2019-10-25SEMICON MFG INT (SHANGHAI) CORP
4 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2019-10-25

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a method for preparing silicon dioxide dielectric films. The method for preparing the silicon dioxide dielectric films sequentially includes steps of carrying out solution filling on wafers; transforming phases; carrying out hydrolysis; carrying out final treatment. The step for transforming the phases is carried in phase transformation solution. The method for preparing the silicon dioxide dielectric films has the advantages that the flowability of coating solution is sufficiently utilized, and accordingly the method is high in gap filling performance and technological stability.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a silicon dioxide dielectric film. Background technique

[0002] In the field of semiconductor devices, chemical vapor deposition (CVD) processes are commonly used to form oxides such as front-end shallow trench isolation (FEOL STI) dielectrics, interlayer dielectric (ILD) dielectrics, and back-end-of-line (BEOL) interlayer dielectrics. silicon thin film. Chemical vapor deposition uses various energy sources such as heating, plasma excitation or light radiation to make chemical substances in the gaseous state or vapor state form solid deposits through chemical reactions in the gas phase or gas-solid interface in the reactor by means of chemical reactions, and Volatile by-products exit the interface surface.

[0003] The size of current semiconductor devices continues to shrink, and the traditional CVD process encounters bottlenecks in the performan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More