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A high -frequency chip waveguard packaging inverted interconnection process method

A process method and chip technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve low parasitic effects, low loss, and good controllability of coherent parameters

Inactive Publication Date: 2019-09-24
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) Loss problem: In the waveguide package of the high-frequency solid-state integrated amplifier module, the low-loss transition connection between the chip and the waveguide in the module is an urgent need at present. At present, metal wire bonding is commonly used to realize the chip and the transmission line ( The connection between microstrip lines and coplanar waveguides is a key technology in packaging

Method used

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  • A high -frequency chip waveguard packaging inverted interconnection process method
  • A high -frequency chip waveguard packaging inverted interconnection process method
  • A high -frequency chip waveguard packaging inverted interconnection process method

Examples

Experimental program
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Effect test

Embodiment 1

[0051] Such as Figure 1-7 As shown, when a special-shaped microstrip line substrate is used, the specific package flip-chip interconnection process steps are as follows:

[0052] First, according to the size of the chip and its pad, and the performance design parameters of the corresponding functional modules, the size, cavity and irregular boundary structure of the special-shaped microstrip line substrate are designed and manufactured;

[0053] Then, use solder to flatly mount the microstrip line substrate on the surface of the package cavity;

[0054] Then according to the size of the chip pad, make flip-chip solder bumps on the chip pad;

[0055] Finally, flip-chip bonding technology is used to realize the interconnection between the chip and the microstrip line substrate.

[0056] In the steps of this interconnection process, based on the structural design of the special-shaped microstrip line substrate, the microstrip line structure is fabricated on the quartz substrat...

Embodiment 2

[0064] Such as Figure 8-14 As shown, when flip-chip interconnection is used, the specific package flip-chip interconnection process steps are as follows:

[0065] 1. According to the packaging design requirements, select the appropriate material to make the supporting substrate of the chip and the microstrip line substrate;

[0066] 2. According to the size of the chip and the microstrip line substrate, make a groove on the substrate for placing the chip and the microstrip line substrate, the purpose is to fix the position of the chip and the microstrip line substrate during flip-chip welding, and at the same time Ensure the flatness of the patch;

[0067] 3. Mount the chips and microstrip line substrates flatly in the substrate grooves to ensure the high flatness requirements of the flip-chip welding technology for the samples;

[0068] 4. According to the size and spacing of chip pads, the size and spacing of microstrip line substrate pads, and the corresponding functiona...

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Abstract

The invention discloses a process method for flip-chip interconnection of high-frequency chip waveguide packaging, which belongs to the field of interconnection packaging of microelectronic devices. Advanced MEMS micromachining technology realizes the metal interconnection of high-frequency solid-state integrated amplifier module waveguide package, which can shorten the cross-over distance of chip interconnection, has no lead structure, has low parasitic effect, small bonding size and controllability of coherent parameters Good advantages, low loss metal interconnection for waveguide packaging of solid-state integrated amplifier modules in high frequency band / terahertz frequency band.

Description

technical field [0001] The invention relates to a flip-chip interconnection process method for high-frequency chip waveguide packaging, which belongs to the field of microelectronic device interconnection packaging and can be used for low-loss metal interconnection of high-frequency / terahertz frequency band solid-state integrated amplifier module waveguide packaging. Background technique [0002] Solid-state integrated amplifiers with good performance are of great significance to the development of high-frequency / terahertz application systems. With the increase of frequency and bandwidth, one of the key issues affecting the performance of solid-state integrated amplifier modules is their waveguide packaging and interconnection technology. In the DAHI (Diverse Accessible Heterogeneous Integration) program established by the US Defense Advanced Research Projects Agency (DARPA) in 2012, corresponding projects are already conducting research in this area. [0003] The current hi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56H01L21/60
CPCH01L24/43H01L21/56H01L2224/16225
Inventor 苏娟刘杰刘清锋周林康小克冯正谭为邓贤进张健
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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