Manufacturing method and test circuit of a semiconductor device

Abstract

The present invention discloses a semiconductor device manufacturing method and a semiconductor device test circuit. The method comprises the steps of providing a semiconductor substrate having an active area and a non-active area; forming a source, a grid and a drain in the active area of the semiconductor substrate; forming a field oxide layer on the surface of the non-active area of the semiconductor substrate; forming at least one pair of PN-junction structure and a first polysilicon structure on the surface of the field oxide layer, wherein the at least one pair of PN-junction structure is used as an electrostatic protection unit, and the first polysilicon structure is used as a polysilicon fuse wire; forming the dielectric layers on the electrostatic protection unit, the polysilicon fuse wire and the active area, and making a plurality of contact holes in the dielectric layers; filling the plurality of contact holes with metals, and making the metal interconnection of the electrostatic protection unit, the polysilicon fuse wire and the source, the grid and the drain of the active area, wherein the electrostatic protection unit and the polysilicon fuse wire are connected in series and then are in parallel connection between the source and the grid. According to the present invention, the real electrical parameters of the transistors in a semiconductor device and the electrical parameter of the electrostatic protection unit are detected effectively.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a manufacturing method and a testing circuit of a semiconductor device. Background technique [0002] Static electricity and electrostatic discharge are ubiquitous in daily life, but for electronic devices, a slight discharge that cannot be detected by the human body may cause serious damage or failure of the electronic device, or, when the electronic device is placed alone or packed into a circuit module, Even without power, static electricity can cause permanent damage to devices. Therefore, in existing electronic devices, components sensitive to electrostatic discharge, such as integrated circuits and transistors, all have an electrostatic protection (Electron Static Discharge, ESD) design. [0003] Taking N-type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) as an example, refer to Figure 1a As shown, it is a sectional view of an NMOSFET with ESD provided...

AI Technical Summary

Problems solved by technology

[0007] The invention provides a manufacturing method and a test circuit of a semiconductor device to solve the problem that the electrical parameters of the transistor are affected by ESD in the prior art

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