Solar cell element and solar cell module
A technology for solar cells and components, applied in electrical components, circuits, photovoltaic power generation, etc., can solve problems such as the volatility of alumina, and achieve the effect of maintaining photoelectric conversion efficiency
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no. 1 Embodiment approach
[0024]
[0025] Figure 1~4 The solar cell element 10 according to this embodiment is shown. Such as image 3 As shown, the solar cell element 10 has: a light-receiving surface on which light is mainly incident, that is, a first main surface 10a; a main surface (back surface) located on the opposite side of the first main surface 10a, that is, a second main surface 10b; and side surfaces 10c. In addition, the solar cell element 10 includes a silicon substrate 1 as a semiconductor substrate. The silicon substrate 1 also has a first main surface 1a, a second main surface 1b located on the opposite side of the first main surface 1a, and a side surface 1c. The silicon substrate 1 has: a first semiconductor layer 2 as a semiconductor region of one conductivity type (for example, p-type); The second semiconductor layer 3. In addition, the solar cell element 10 includes a third semiconductor layer 4 , an antireflection layer 5 , a first electrode 6 , a second electrode 7 , a t...
no. 2 Embodiment approach
[0086] Next, a second embodiment in which the present invention is applied to a PERC (Passivated Emitter Rear Cell) solar cell element will be described. Portions common to those of the first embodiment are omitted.
[0087]
[0088] Such as Figure 6 as well as Figure 7 As shown, the solar cell element 10 has the third electrode 8 formed on the protective layer 11 . Furthermore, the third electrode 8 is also formed on the passivation layer 9 and on the second main surface 1b of the silicon substrate 1 where the protective layer 11 is not formed. In this way, the third electrode 8 is formed to cover substantially the entire second main surface 1 b of the silicon substrate 1 .
[0089] In this embodiment, even if the 3rd electrode 8 is formed on the protective layer 11, moisture penetration from the outside can be suppressed, and the passivation effect will not be impaired. Thereby, reliability can be improved without impairing the photoelectric conversion efficiency of ...
Embodiment
[0118] Hereinafter, examples will be described.
[0119] First, as the silicon substrate 1 having the p-type first semiconductor layer 2 , a polysilicon substrate having a square side of about 156 mm in plan view and a thickness of about 200 μm was prepared. The silicon substrate 1 was etched with NaOH aqueous solution to remove the damaged layer on the surface. Then, the silicon substrate 1 is cleaned. Then, a texture is formed on the first main surface 1 a side of the silicon substrate 1 using the RIE method.
[0120] Next, by adding phosphorus oxychloride (POCl 3 ) The vapor phase thermal diffusion method used as a diffusion source diffuses phosphorus into the silicon substrate 1 . As a result, the n-type second semiconductor region 3 having a sheet resistance of about 90Ω / □ is formed. In addition, although the second semiconductor layer 3 was also formed on the side surface 1c and the first main surface 1a side of the silicon substrate 1, the second semiconductor layer...
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Abstract
Description
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