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Photosensitive diode and preparation method thereof

A photosensitive diode and photosensitive technology, which is applied in the field of optoelectronics, can solve the problems of poor stability, low narrow-spectrum response performance, and large wavelength range, etc., achieve strong absorption intensity, overcome the effects of low narrow-spectrum response performance and narrow spectral absorption range

Active Publication Date: 2017-03-01
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the technical problem to be solved in the present invention is to overcome the defects of the narrow spectral response photodiode in the prior art that the spectral response wavelength range is relatively large and the narrow spectral response performance is low, thereby providing a photosensitive diode with high performance narrow spectral response and its preparation method
[0006] Another technical problem to be solved by the present invention is to overcome the defect of poor stability of the narrow spectral response photodiode in the prior art, thereby providing a highly stable narrow spectral response photodiode and its preparation method

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  • Photosensitive diode and preparation method thereof
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  • Photosensitive diode and preparation method thereof

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Embodiment 1

[0047] This embodiment provides a photosensitive diode, such as figure 1 As shown, it includes: a substrate 1, a first electrode layer 2, a single photosensitive absorption material layer 3 and a second electrode layer 4; the first electrode layer 2 is arranged on the substrate 1; the single photosensitive absorption material layer 3 It is arranged on the first electrode layer 2, and the half-width peak width of the absorption spectrum of the single photosensitive absorption material layer 3 is lower than 80 nm; the second electrode layer 4 is arranged on the single photosensitive absorption material layer 3, and The first electrode layer (2) is electrically connected and matches the work function of the single photosensitive absorption material layer 3 .

[0048] Specifically, the substrate 1 can be a colored or colorless transparent substrate, which can be rigid or flexible. When the substrate 1 is a colored transparent substrate, it can play the role of a filter. When the s...

Embodiment 2

[0066] This embodiment provides a method for preparing the photodiode described in Embodiment 1, such as Figure 11 shown, including the following steps:

[0067] S1. Forming the first electrode layer of the photodiode on the substrate.

[0068] S2. Forming a single photosensitive absorption material layer and a second electrode layer sequentially on the first electrode layer.

[0069] S3. Electrically connecting the first electrode layer and the second electrode layer.

[0070] Specifically, the preparation process of the above-mentioned first electrode layer, single photosensitive absorbing material layer and second electrode layer may be one or a combination of sputtering, spin coating, evaporation, and solution method to grow single crystals. The connection between the first electrode layer and the second electrode layer can be realized by forming the pins of the first electrode layer of the photodiode and the pins of the second electrode layer on the substrate, and elec...

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Abstract

The invention provides a photosensitive diode and a preparation method thereof. The photosensitive diode comprises a substrate, a first electrode layer, a single photosensitive absorption material layer and a second electrode layer. The first electrode layer is arranged on the substrate. The single photosensitive absorption material layer is arranged on the first electrode layer. The width of half-broad peak of an adsorption spectrum of the single photosensitive absorption material layer is smaller than 80nm. The second electrode layer is arranged on the single photosensitive absorption material layer, electrically connected with the first electrode layer and matched with a work function of the single photosensitive absorption material layer. Thus, a schottky barrier structure is formed on an interface of the second electrode layer and the single photosensitive absorption material layer; and photoresponse is generated for specific light in a spectrum adsorption range. In this way, by only use of the single photosensitive absorption material layer, a rectification characteristic of the photosensitive diode can be achieved; the narrow spectrum response performance of the photosensitive diode can be improved without additionally adding filtering sheets for filtering stray light and space is saved.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to a photosensitive diode and a preparation method thereof. Background technique [0002] Photodiode is a semiconductor device that converts optical signals into electrical signals. It has unidirectional conductivity, so a reverse voltage needs to be applied when working. When there is no light, the reverse current is very small (generally less than 0.1 microampere), which is called dark current. When there is light, the photons carrying energy enter the PN junction, and transfer the energy to the bound electrons on the covalent bond, so that some electrons break free from the covalent bond, thereby generating electron-hole pairs, which are called photogenerated carriers. . They participate in the drift movement under the action of reverse voltage, which makes the reverse current significantly larger. The greater the intensity of light, the greater the reverse current, this charact...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/657H10K30/451Y02E10/549Y02P70/50
Inventor 董桂芳李文海李东邱勇
Owner TSINGHUA UNIV