A kind of photosensitive diode and preparation method thereof

Abstract

The invention provides a photosensitive diode and a preparation method thereof, wherein the photosensitive diode includes a substrate, a first electrode layer, a single photosensitive absorption material layer and a second electrode layer; the first electrode layer is arranged on the substrate; the single photosensitive absorption material layer is arranged On the first electrode layer, and the half-width peak width of the absorption spectrum of the single photosensitive absorption material layer is lower than 80nm; the second electrode layer is arranged on the single photosensitive absorption material layer, and is electrically connected to the first electrode layer, and It matches the work function of a single photosensitive absorbing material layer. Thus, a Schottky barrier structure is formed at the interface between the second electrode layer and the single photosensitive absorption material layer, which only generates photoresponse to specific light in the spectral absorption range, so the photosensitive diode of the present invention only adopts a single photosensitive absorption The material can realize the rectification characteristics of the photodiode, and there is no need to add an additional filter to filter out stray light to improve the narrow-spectrum response performance of the photodiode, which saves space.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to a photosensitive diode and a preparation method thereof. Background technique [0002] Photodiode is a semiconductor device that converts optical signals into electrical signals. It has unidirectional conductivity, so a reverse voltage needs to be applied when working. When there is no light, the reverse current is very small (generally less than 0.1 microampere), which is called dark current. When there is light, the photons carrying energy enter the PN junction, and transfer the energy to the bound electrons on the covalent bond, so that some electrons break free from the covalent bond, thereby generating electron-hole pairs, which are called photogenerated carriers. . They participate in the drift movement under the action of reverse voltage, which makes the reverse current significantly larger. The greater the intensity of light, the greater the reverse current, this charact...

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Problems solved by technology

[0005] Therefore, the technical problem to be solved in the present invention is to overcome the defects of the narrow spectral response photodiode in the prior art that the spectral response wavelength range is relatively large and the narrow spectral response performance is low, thereby providing a photosensitive diode with high performance narrow spectral response and its preparation method

[0006] Another technical problem to be solved by the present invention is to overcome the defect of poor stability of the narrow spectral response photodiode in the prior art, thereby providing a highly stable narrow spectral response photodiode and its preparation method

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