InP quantum dot and preparation method thereof

A technology of quantum dots and precursors, applied in the field of InP quantum dots and their preparation, can solve the problems of low luminous efficiency, low color purity, poor stability, etc.

Active Publication Date: 2017-03-08
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a kind of InP quantum dot and preparation method thereof, to solve the problems of low luminous efficiency, poor stability and low color purity of InP quantum dots in the prior art

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  • InP quantum dot and preparation method thereof

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preparation example Construction

[0030] As described in the background technology, InP quantum dots in the prior art have low luminous efficiency, poor stability and low color purity. In order to solve this problem, a typical implementation of the present application provides a method for preparing InP quantum dots. The preparation method includes: step S1, using the first InP core and InP nano clusters to prepare a second InP core; step S2, using the second InP core as the core, making Zn precursor, Se precursor and optional S precursor Formed on the surface of the second InP core by epitaxial growth method containing ZnSe x S 1-x Or ZnSe / ZnS shell, get InP / ZnSe x S 1-x Quantum dots or InP / ZnSe / ZnS quantum dots, where 0

[0031] When using the first InP core and InP nanoclusters to prepare the second InP core, the small particle clusters of InP nanoclusters decompose rapidly and diffuse and grow on the large particle first InP core. amount, the amount of cluster solution added, reaction temperature ...

Embodiment 1

[0045] Synthesis of InP nanoclusters:

[0046] Add 0.13mmol In(MA) 3 (indium myristate), 0.1mmol dodecanoic acid and 2.0g isotriaxane join in the 50mL three-necked flask, and this three-necked flask is placed under N 2 Heating to 140° C. under exhaust state to form the third mixed liquid. After stabilizing at 140°C for 10min, the temperature of the third mixed solution was lowered to 90°C, and then the second P precursor reactant composed of 0.045mmol TMS-P (tri(trimethylsilyl)phosphine) and 0.045mmol tributylphosphine The second reaction system was formed by rapidly injecting into the third mixed solution at 90° C., and the second reaction system was reacted at 90° C. for 5 minutes to obtain a fourth mixed solution containing InP nanoclusters. Carry out TEM detection and UV test to the InP nanocluster in the 4th mixed solution, wherein TEM image and particle size distribution histogram and UV image are as follows respectively figure 1 and figure 2 shown.

[0047] Synthe...

Embodiment 2

[0052] Synthesis of InP nanoclusters:

[0053] 0.1mmol In(Ac) 3 (indium acetate), 0.3mmol tetradecanoic acid and 1.5g n-eicosane join in the 50mL three-necked flask, and this three-necked flask is placed under N 2 Heating to 100°C in the exhaust state to form the third mixed liquid. After stabilizing at 100°C for 10min, the temperature of the third mixed solution was lowered to 25°C, and then the second P precursor reactant composed of 0.033mmol TMS-P (tris(trimethylsilyl)phosphine) and 0.033mmol trioctylphosphine Quickly injected into the third mixed solution at 25° C. to form a second reaction system, and reacted the second reaction system at 25° C. for 5 minutes to obtain a fourth mixed solution containing InP nanoclusters.

[0054] Synthesis of the second InP core

[0055] Add 0.045mmol In(MA) 3 (indium myristate), 0.05mmol dodecanoic acid and 6.0g octadecene join in the 100mL three-necked flask, and this three-necked flask is placed under N 2 Heating to 150° C. under...

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Abstract

The invention provides an InP quantum dot and a preparation method thereof. The preparation method includes the steps that 1, a first InP core and an InP nanocluster are adopted to prepare a second InP core; 2, with the second InP core as the core, a Zn precursor, a Se precursor and an optional S precursor are made to form a shell containing ZnSexS1-x or ZnSe / ZnS on the surface of the second InP core with an epitaxial growth method, and the InP / ZnSexS1-x quantum dot or the InP / ZnSe / ZnS quantum dot is obtained, wherein 0<x<=1. By adopting the first InP core and the InP nanocluster to prepare the second InP core, the obtained second InP core is more uniform in particle size, and the peak width at half height is reduced; the shell of the obtained InP quantum dot contains both Se and S, so that the coating thickness of the shell is further increased, and the luminous efficiency and stability of the InP quantum dot are further improved.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to an InP quantum dot and a preparation method thereof. Background technique [0002] Quantum dots are semiconductor nanocrystals composed of hundreds to thousands of atoms with a particle size smaller than or close to the exciton Bohr radius. Due to the influence of the quantum confinement effect, it has excellent luminous properties. For example, quantum dot materials have the advantages of adjustable luminous wavelength, high luminous efficiency, and good stability. They have a wide range of applications in the fields of display, lighting, biology, and solar cells. application. [0003] With the deepening of research, quantum dot technology has gradually moved from laboratory development to product application, which will change people's future life style. In recent years, great progress has been made in the research of II-VI quantum dot materials such as CdSe and CdS, incl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/70C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/70C09K11/883
Inventor 乔培胜汪均涂丽眉李光旭高静
Owner NANJING TECH CORP LTD
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