Necking device and necking method for seed crystal of horizontal gradient condensation single crystal growth

Abstract

The invention discloses a necking apparatus and method for growing seed crystal by horizontal gradient condensing of monocrystal. The necking apparatus comprises a coaxial ring support member, a curved heating member and a temperature monitoring member; the coaxial ring support member is a high-temperature-resistant ceramic ring provided with four support holes and six circular through holes; the curved heating member is made by inserting and winding a high-temperature resistance wire through the circular through holes in round trips; the temperature monitoring member comprises four thermocouples and is fixed to the coaxial ring support member through the support holes. Under monitoring of the temperature monitoring member, local temperature rises and falls of the curved heating member above seed crystal are monitored in conjunction with rocking of a horizontal gradient condensing furnace, and seed crystal necking is carried out. Necking can be carried out upon fusion welding of seed crystal, surface defects of the seed crystal occurring during machining and genetic dislocation defects of the seed crystal itself are eliminated, crystal forming rate by monocrystal growth is increased, and the monocrystal grown has higher quality.

Description

technical field [0001] The present invention relates to a seed crystal necking device and method, more particularly, the present invention relates to a seed crystal necking device and method for horizontal gradient condensation single crystal growth. Background technique [0002] The horizontal gradient condensation growth method is the most common method in single crystal growth. Due to the advantages of no mechanical movement, no restraint in growth, and large growth space during the growth process, the crystal grown by this method has no internal stress and composition Uniform, especially suitable for making high-quality optical and electronic devices. The basic principle of the horizontal gradient condensation growth method is to vacuumize and seal the polycrystalline material growth material filled with simple substances or compounds, then place it in a horizontal gradient condensation growth furnace, and raise the temperature above the melting point of the simple subst...

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Problems solved by technology

[0003] Although the method of directional seed crystal growth has solved the problem of single crystal utilization rate after successful single crystal growth, the crystallization rate and crystal quality of single crystal need to be further improved, which is mainly caused by the following two aspects : 1) Since the seed crystal will produce some surface defects during the machining process, twin crystals and miscellaneous crystals will be produced when the seed crystal is welded, which will greatly reduce the crystallization rate of single crystal growth, not only causing a lot of manpower, material resources and The waste of energy also affects the process of single crystal growth process optimization; 2) Since some genetic defects of the seed crystal itself cannot be found during the selection of the seed crystal, the quality of the grown single crystal is poor, and it is impossible to produce high-quality optics, electronics

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