Necking apparatus and method for growing seed crystal by horizontal gradient condensing of monocrystal

A horizontal gradient, seed crystal technology, applied in the direction of single crystal growth, crystal growth, self-solidification method, etc., can solve the problems of inability to manufacture optical and electronic devices, reducing the crystallization rate of single crystal growth, waste of manpower, material resources and energy, etc. Achieve the effect of eliminating hereditary defects, eliminating surface defects, and improving crystallization rate

Active Publication Date: 2017-03-08
INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the method of directional seed crystal growth has solved the problem of single crystal utilization rate after successful single crystal growth, the crystallization rate and crystal quality of single crystal need to be further improved, which is mainly caused by the following two aspects : 1) Since the seed crystal will produce some surface defects during the machining process, twin crystals and miscellaneous crystals will be produced when the seed crys

Method used

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  • Necking apparatus and method for growing seed crystal by horizontal gradient condensing of monocrystal
  • Necking apparatus and method for growing seed crystal by horizontal gradient condensing of monocrystal
  • Necking apparatus and method for growing seed crystal by horizontal gradient condensing of monocrystal

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] (1) Furnace loading, such as image 3 Shown: The horizontal gradient condensation growth furnace is placed horizontally, and the sealed growth material tube and the necking device are installed in sequence. The coaxial ring support member of the necking device surrounds the periphery of the seed crystal bag, and the seed crystal bag and the growth material The intersection of the tubes and the side of the coaxial ring support member facing the furnace are on the same longitudinal plane, and the two free ends of the curved heating member extend to the outside of the horizontal gradient condensation growth furnace and are connected to the heating wire of the thyristor control power supply; temperature monitoring The ends of the four thermocouples of the component extend out of the horizontal gradient condensation growth furnace and connect with the thermocouple compensation line of the temperature monitor;

[0050] (2) Melt material: the horizontal gradient condensation g...

Embodiment 2

[0057] (1) Furnace loading, such as image 3 As shown: the horizontal gradient condensation growth furnace is placed horizontally, and the sealed growth material tube, seed crystal bag and necking device are loaded in sequence. The coaxial ring support member of the necking device surrounds the periphery of the seed crystal bag, and the seed crystal The intersection of the bag and the growth material tube is on the same longitudinal plane as the coaxial ring support member facing the furnace, and the two free ends of the curved heating member extend to the outside of the horizontal gradient condensation growth furnace and connect with the silicon controlled silicon control power supply heating wire connected; the ends of the four thermocouples of the temperature monitoring component extend out of the horizontal gradient condensation growth furnace and are connected with the thermocouple compensation lines of the temperature monitor;

[0058] (2) Melt material: the horizontal g...

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Abstract

The invention discloses a necking apparatus and method for growing seed crystal by horizontal gradient condensing of monocrystal. The necking apparatus comprises a coaxial ring support member, a curved heating member and a temperature monitoring member; the coaxial ring support member is a high-temperature-resistant ceramic ring provided with four support holes and six circular through holes; the curved heating member is made by inserting and winding a high-temperature resistance wire through the circular through holes in round trips; the temperature monitoring member comprises four thermocouples and is fixed to the coaxial ring support member through the support holes. Under monitoring of the temperature monitoring member, local temperature rises and falls of the curved heating member above seed crystal are monitored in conjunction with rocking of a horizontal gradient condensing furnace, and seed crystal necking is carried out. Necking can be carried out upon fusion welding of seed crystal, surface defects of the seed crystal occurring during machining and genetic dislocation defects of the seed crystal itself are eliminated, crystal forming rate by monocrystal growth is increased, and the monocrystal grown has higher quality.

Description

technical field [0001] The present invention relates to a seed crystal necking device and method, more particularly, the present invention relates to a seed crystal necking device and method for horizontal gradient condensation single crystal growth. Background technique [0002] The horizontal gradient condensation growth method is the most common method in single crystal growth. Due to the advantages of no mechanical movement, no restraint in growth, and large growth space during the growth process, the crystal grown by this method has no internal stress and composition Uniform, especially suitable for making high-quality optical and electronic devices. The basic principle of the horizontal gradient condensation growth method is to vacuumize and seal the polycrystalline material growth material filled with simple substances or compounds, then place it in a horizontal gradient condensation growth furnace, and raise the temperature above the melting point of the simple subst...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B11/14
CPCC30B11/003C30B11/14
Inventor 窦云巍方攀陈莹唐明静张羽袁泽锐尹文龙康彬
Owner INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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