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A kind of purification device and purification method of raw material for crystal growth by gas phase method

A technology of crystal growth and gas phase method, applied in the directions of crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of residual impurities and incomplete purification, and achieve effective separation, rapid and effective purification, and enhanced controllability. Effect

Active Publication Date: 2018-12-14
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional raw material purification process is difficult to thoroughly remove the low-melting point impurities and high-melting point impurities in the raw material at the same time, the purification is not thorough, and impurities are likely to remain

Method used

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  • A kind of purification device and purification method of raw material for crystal growth by gas phase method
  • A kind of purification device and purification method of raw material for crystal growth by gas phase method

Examples

Experimental program
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Effect test

Embodiment 1

[0021] Gas phase method CdS raw material purification method, the implementation steps are as follows:

[0022] 1. Use such as figure 1 In the shown double-flange raw material purification device, the cylindrical support structure 5 and the substrate 4 are placed at the A end of the quartz tube 1, and the CdS raw material 6 is placed in the small boat 7 at the B end of the quartz tube 1, and the distance between the small boat 7 and the substrate 4 is 25cm; Use the left flange 2 and the right flange 3 to seal the openings at both ends of the quartz tube 1, and then place the purification device as a whole horizontally in a dual-temperature zone resistance furnace (the model of the dual-temperature zone resistance furnace is PVT-TC -01).

[0023] 2. After the device is sealed, the system is vacuumed, and the air inlets of the A and B flanges at both ends of the quartz tube are kept closed, and the air outlet is opened to vacuum for 20 minutes to remove the air in the quartz tu...

Embodiment 2

[0030] Gas phase ZnSe raw material purification method, the implementation steps are as follows:

[0031] 1. Use such as figure 1 In the shown double-flange raw material purification device, the cylindrical support structure 5 and the substrate 4 are placed at the A end of the quartz tube 1, and the ZnSe raw material 6 is placed in the small boat 7 at the B end of the quartz tube 1, and the distance between the small boat 7 and the substrate 4 is About 25cm; Use the left flange 2 and the right flange 3 to seal the openings at both ends of the quartz tube 1, and then place the purification device as a whole horizontally in a dual-temperature zone resistance furnace (the model of the dual-temperature zone resistance furnace is PVT- TC-01).

[0032] 2. After the device is sealed, the system is vacuumed, and the air inlets of the A and B flanges at both ends of the quartz tube are kept closed, and the air outlet is opened to vacuumize for 20 minutes to remove the air in the chamb...

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Abstract

The invention discloses a purification device of a raw material for gas phase crystal growth crystal growth and a purification method of the device. The device is a quartz tube with openings at the two ends; a cylindrical support structure and a substrate are placed at the end A horizontally; a boat for containing the raw material is placed at the end B; a distance between the boat and the substrate is 15-35cm; a flange seal with an air inlet and an air outlet is arranged at each of the openings at the two ends of the quartz tube. The device can quickly and effectively purify the raw material for the gas phase crystal growth. With the adoption of two constant temperature technologies at high temperature and low temperature, low melting point impurities in the raw material can be removed, and effective separation of high melting point impurities from the raw material is achieved at the same time in a one-step purification process. The purification device employs a double-flange design, improves controllability of an air flow in a cavity body, ensures the purity of the raw material for the gas phase crystal growth and solves the key problems influencing the quality and photoelectric properties of crystals in the gas phase crystal growth.

Description

technical field [0001] The invention relates to gas phase crystal growth technology, in particular to a purification device and purification method for raw materials used in gas phase crystal growth. Background technique [0002] Vapor phase crystal growth technology is widely used in the field of crystal growth. In the process of preparing crystals by the gas phase method, the purity of the raw materials used for crystal growth has a great influence on the quality, optical and electrical properties of the grown crystals. First of all, the impurities in the raw materials tend to enter the crystal during the crystal growth process, leading to the formation of defects such as inclusions, micropipes, and dislocations inside the crystal, which seriously affect the quality of the prepared crystal. Secondly, the doping of certain impurity elements in the raw materials will form free carriers in the crystal, thereby changing the resistivity, conductivity type, optical transmittanc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/00C30B23/00C30B28/12C30B35/00
CPCC30B23/00C30B25/00C30B28/12C30B35/007
Inventor 司华青霍晓青郭文斌张颖武程红娟徐永宽张志鹏于凯练小正
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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