Solar cell photoluminescence high-speed detection system based on short-wave infrared imager and operation method thereof

Abstract

The invention relates to a solar cell photoluminescence high-speed detection system based on a short-wave infrared imager and an operation method thereof. The system comprises an excitation light source device, a transmitting and scanning device, and a principal computer. The system further comprises a short-wave infrared imager, which is connected with the principal computer and is used for receiving fluorescence signals sent by a solar cell film, a chip and a component for imaging to get a photoluminescence image. The system adapts to a wide variety of materials, and can be used to detect solar cell films, chips and components which are made of mono-crystalline silicon, polycrystalline silicon, atypical silicon, gallium arsenide or copper indium gallium selenide material. The InGaAs short-wave infrared imager used in the invention has very high quantum efficiency in the photoluminescence spectrum section of solar cell films, chips and components which are made of these materials, and can acquire a photoluminescence image at high speed within microsecond-level integration time to detect solar cell films, chips and components.

Description

technical field [0001] The invention relates to a solar cell photoluminescence high-speed detection system based on a short-wave infrared imager and an operation method thereof, and belongs to the technical field of solar cell detection. Background technique [0002] The production process of solar cell films and wafers involves multiple processes such as slicing, texturing, diffusion, etching, anti-reflection coating, electrode screen printing and sintering, and each of these processes may damage silicon wafers and form Defects lead to low yield of solar cells and waste a lot of energy. The manufacturing process of solar cell modules involves steps such as sorting, scribing, welding, lamination, and framing. It is also very easy to cause damage to solar films and wafers in these steps, which will affect the quality of the final solar cell modules. Therefore, it is particularly important to detect the quality of solar cell films, wafers and components in real time and quick...

AI Technical Summary

Problems solved by technology

However, this patent has the following problems: (1) it is necessary to apply a reverse current to the solar cell sheet, then it can only be aimed at the solar cell sheet and components that have grown electrodes, and cannot detect solar cell wafers and films without electrodes. Detection and screening are carried out in the first few links of solar cell production; (2) Applying a reverse current to the solar cell causes a temperature change, which requires waiting for a certain period of time, and the detection efficiency is low; (3) Detection is performed by applying a reverse current to the solar cell, It will affect the life of the solar cell to a certain extent, and it will damage the solar cell; (4) The infrared imager detects the temperature, that is, thermal imaging, which uses the radiated light of the object for imaging, which is very sensitive to temperature, but the outline and details of the object will be blurred

[0004] Short-wave infrared imaging is an emerging research field in China. At present, this short-wave infrared imager is still in the stage of R&D and manufacturing, and has not been officially put into application.

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