Alternating current driven quantum dot light emitting diode, and preparation method and application thereof

A quantum dot light-emitting, AC-driven technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of unfavorable industrialization promotion, multiple dielectric layers, complex structures, etc., and achieve large-scale industrialization Promotion and application, the effect of mature and simple methods

Active Publication Date: 2017-03-29
TCL CORPORATION
View PDF4 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot light-emitting diode driven by alternating current and its preparation method, aiming at solving the problem that the existing quantum dot light-emitting diode driven by alternating current requires multiple di

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Alternating current driven quantum dot light emitting diode, and preparation method and application thereof
  • Alternating current driven quantum dot light emitting diode, and preparation method and application thereof
  • Alternating current driven quantum dot light emitting diode, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0044] Correspondingly, the embodiment of the present invention also provides a method for manufacturing an AC-driven quantum dot light-emitting diode, comprising the following steps:

[0045] S01. Depositing a bottom electrode on the substrate, and depositing a quantum dot luminescent layer on the bottom electrode;

[0046] S02. Depositing a first ionic liquid layer on the quantum dot light-emitting layer;

[0047] S03. Depositing a top electrode on the first ionic liquid layer.

[0048] Specifically, the deposition of the bottom electrode, quantum dot light-emitting layer, and top electrode can be achieved by conventional methods in the art. The first ionic liquid layer is preferably prepared by a solution processing method.

[0049] Preferably, before depositing the quantum dot light-emitting layer, it also includes depositing a second ionic liquid layer and / or an insulating layer on the bottom electrode. The diionic liquid layer is preferably prepared by a solution proc...

Embodiment 1

[0058] An AC-driven quantum dot light-emitting diode, such as figure 1 As shown, it includes a substrate 1, a bottom electrode 2, a quantum dot light-emitting layer 5, a first ionic liquid layer 6, and a top electrode 7 that are sequentially stacked, wherein the substrate 1 is a glass substrate, and the bottom electrode 2 ITO, the quantum dot luminescent layer 5 is a CdSe / ZnS quantum dot luminescent layer, and the first ionic liquid layer 6 is N,N-diethyl-N-methyl-N-(n-propyl) tri Fluoromethyl ammonium trifluoroborate (Et 2 PrNMe-CF 3 BF 3 ) ionic liquid layer with a thickness of 10 nm, and the top electrode 7 is Al.

[0059] The preparation method of the quantum dot light-emitting diode driven by the above alternating current comprises the following steps:

[0060] S11. Spin-coat a layer of CdSe / ZnS quantum dot luminescent layer on the ITO conductive glass;

[0061] S12. Spin-coat a layer of N,N-diethyl-N-methyl-N-(n-propyl) trifluoromethyl ammonium trifluoroborate (Et ...

Embodiment 2

[0065] An AC-driven quantum dot light-emitting diode, such as image 3 As shown, it includes a substrate 1, a bottom electrode 2, a second ionic liquid layer 3, a quantum dot light-emitting layer 5, a first ionic liquid layer 6, and a top electrode 7 that are sequentially stacked, wherein the substrate 1 is a glass substrate Bottom, the bottom electrode 2 is ITO, and the second ionic liquid layer 3 is a 1-butyl-3-methylimidazolium trifluoromethanesulfonate (BMIM-OTF) ionic liquid layer with a thickness of 20nm. The quantum dot luminescent layer 5 is a CdSe / ZnS quantum dot luminescent layer, and the first ionic liquid layer 6 is N,N-diethyl-N-methyl-N-(n-propyl)trifluoromethyltrifluoro Ammonium borate (Et 2 PrNMe-CF 3 BF 3 ) ionic liquid layer with a thickness of 10 nm, and the top electrode 7 is Al.

[0066] The preparation method of the quantum dot light-emitting diode driven by the above alternating current comprises the following steps:

[0067] S21. Spin-coat a layer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides an alternating current driven quantum dot light emitting diode. The alternating current driven quantum dot light emitting diode comprises a substrate, a bottom electrode, a quantum dot light emitting layer and a top electrode, and also comprises a first ion liquid layer arranged between the top electrode and the quantum dot light emitting layer; the first ion liquid layer is prepared from a first ion liquid which only includes negative ions and positive ions; the first ion liquid is in a liquid state at a temperature range of minus 10 to 200 DEG C; and under the alternating current driving, the first ion liquid layer forms an interface double electrode layer on the interface between the quantum dot light emitting layer and the top electrode.

Description

technical field [0001] The invention belongs to the field of quantum dot light-emitting diodes, and in particular relates to an alternating current-driven quantum dot light-emitting diode, its preparation method and application. Background technique [0002] Quantum dot (Quantum dot, QD) is a quasi-zero-dimensional (Quasi-zero-dimensional) nanomaterial, which is composed of a small number of atoms. It has high fluorescence efficiency, narrow emission spectrum, adjustable emission wavelength, and high spectral purity. With special advantages, it has the potential to replace traditional organic or inorganic light-emitting bodies as the core part of next-generation light-emitting devices. Light-emitting diodes based on quantum dots are called quantum dot light-emitting diodes (Quantum dot light-emitting diodes, QLEDs), which have outstanding advantages such as good luminous performance, long service life, simple preparation process, high color purity, and good color temperature...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/14H10K71/00
Inventor 梁柱荣曹蔚然
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap